• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1428-1429
• /
• 2009

Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.6.2-6.2
• /
• 2010

Stainless steel is widely known to have superior corrosion properties. However, in some harsh conditions it still suffers various kinds of corrosions such as galvanic corrosion, pitting corrosion, intergranular corrosion, chloride stress corrosion cracking, and etc. For the corrosion protection of stainless steel, the ceramic coatings such as protective silica film can be used. The sol-gel coating technique for the silica film has been extensively studied especially because of the cost effectiveness. It has been proved that silica can improve the oxidation and the acidic corrosion resistance of metal surface in a wide range of temperatures due to its high heat and chemical resistance. However, in the sol-gel coating process there used to engage a heat treatment at an elevated temperature like $500^{\circ}C{\sim}600^{\circ}C$ where cracks in the silica film would be formed because of the thermal expansion mismatch with the metal. The cracks and pores of the film would deteriorate the corrosion resistance. When the heat treatment temperature is reduced while keeping the adhesion and the density of the film, it could possibly give the enhanced corrosion resistance. In this respect, inorganic protective silica film was tried on the surface of stainless steel using a sol-gel chemical route where silica nanoparticles, tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES) were used. Silica nanoparticles with different sizes were mixed and then the film was deposited on the stainless steel substrate. It was intended by mixing the small and the large particles at the same time a sufficient consolidation of the film is possible because of the high surface activity of the small nanoparticles and a modest silica film is obtained with a low temperature heat treatment at as low as $200^{\circ}C$. The prepared film showed enhanced adhesion when compared with a silica film without nanoparticle addition. The films also showed improved protect ability against corrosion.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.167-169
• /
• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Korean Journal of Materials Research
• /
• v.20 no.10
• /
• pp.555-558
• /
• 2010

This study examined the effect of current density on the surface morphology and physical properties of copper plated on a polyimide (PI) film. The morphology, crystal structure, and electric characteristics of the electrodeposited copper foil were examined by scanning electron microscopy, X-ray diffraction, and a four-point probe, respectively. The surface roughness, crystal growth orientation and resistivity was controlled using current density. Large particles were observed on the surface of the copper layer electroplated onto a current density of 25 mA/$cm^2$. However, a uniform surface and lower resistivity were obtained with a current density of 10 mA/$cm^2$. One of the important properties of FCCL is the flexibility of the copper foil. High flexibility of FCCL was obtained at a low current density rather than a high current density. Moreover, a reasonable current density is 20 mA/$cm^2$ considering the productivity and mechanical properties of copper foil.

• Nuclear Engineering and Technology
• /
• v.32 no.6
• /
• pp.595-604
• /
• 2000

Flow-Accelerated Corrosion Behavior of SA106 Gr.C steel in room temperature alkaline solution simulating the CANDU primary water condition was studied using Rotating Cylinder Electrode. Systems of RCE were set up and electrochemical parameters were applied at various rotating speeds. Corrosion current density decreased up to pH 10.4 then it increased rapidly at higher pH. This is due to the increasing tendency of cathodic and anodic exchange half-cell current. Corrosion potential shifted slightly upward with rotating velocity. Passive film was formed from pH 9.8 by the mechanism of step oxidation and the subsequent precipitation of ferrous species into hydroxyl compound. Above pH 10.4, the film formation process was active and the film became stable. Corrosion current density showed increment in pH 6.98 with the rotating velocity, while it soon saturated from 1000 rpm above pH 9.8. This seems that activation process which represents formation of passive film on the bare metal surface controls the entire corrosion process

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.103-104
• /
• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.254-257
• /
• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.505-511
• /
• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Corrosion Science and Technology
• /
• v.18 no.6
• /
• pp.228-231
• /
• 2019

Aluminum and its alloys have been widely used in various fields because of low weight, high strength, good conductivity, and low price. It is well known that aluminum alloys that cause natural oxide film can inhibit corrosion in wet, salty environments. However, these oxides are so thin that corrosion occurs in a variety of environments. To prevent this problem, an electrochemical anodizing technique was applied to the aluminum alloy surface to form a thick layer of oxide and a unique oxide shape, such as a hierarchical pore structure simultaneously combining large and small pores. The shape of the structures was implemented using stepwise anodization voltages such as 40 V for mild anodizing and 80 V for hard anodizing, respectively. To maximize water repellency, it is crucial to the role of surface structures shape. And a hydrophobic thin film was coated by 1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane (FDTS) to minimize surface energy of the structure surface. Thus, such nanoengineered superhydrophobic surface exhibited a high water contact angle and excellent corrosion resistance such as low corrosion current density and inhibition efficiency.