한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.254-257
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- 2009
Effective Annealing and Crystallization of Si film for Advanced TFT System
Abstract
The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.