Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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FIELD EMISSION CHARACTERISTICS OF DIAMOND FILMS

  • Park, Kyung-Ho (Department of Physics, Ajou University) ;
  • Lee, Soon-Il (Department of Physics, Ajou University) ;
  • Koh, Ken-Ha (Department of Physics, Ajou University) ;
  • Park, Jung-Il (Inorganic Chemistry Department, National Institute of Technology and Quality) ;
  • Park, Kwang-Ja (Inorganic Chemistry Department, National Institute of Technology and Quality)
  • Published : 1996.10.01
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Abstract

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

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