Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 29 Issue 5
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- Pages.505-511
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
FIELD EMISSION CHARACTERISTICS OF DIAMOND FILMS
- Park, Kyung-Ho (Department of Physics, Ajou University) ;
- Lee, Soon-Il (Department of Physics, Ajou University) ;
- Koh, Ken-Ha (Department of Physics, Ajou University) ;
- Park, Jung-Il (Inorganic Chemistry Department, National Institute of Technology and Quality) ;
- Park, Kwang-Ja (Inorganic Chemistry Department, National Institute of Technology and Quality)
- Published : 1996.10.01
Abstract
The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the
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