• 한국재료학회지
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• 제8권8호
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• pp.744-750
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• 1998

마이크로 머신 소자는 일반전자 소자와 달리 소자 자체에 미세한 기계적 구조물을 갖고 있으며, 이의 구동을 통하여 센서 또는 엑츄에이터의 기능을 갖게 된다. 이 소자들은 그 작동 요구특성에 따라 패키지의 기계적, 환경적 격리를 요구하거나 분위기조절이 요구되는 등 까다로운 패키지 특성을 필요로 한다. 또한 미세한 작동소자들로 인하여 열 및 열응력에 매우 민감하며, 패키지방법에 따라 구동부위의 작동 특성이 크게 변화할 수 있다. 본 연구에서는 마이크로 머신 소자가 패키지 상에 접촉되어 패키지 될 때, 소자의 접촉 재료 및 공정온도, 크기 등이 마이크로 머신 소자에 미치는 열응력을 연구하였다. 유한요소해석법을 사용하여 소자에 미치는 열응력과 이로 인한 마이크로머신 소자의 물리적 변형을 예측하고, 이를 통하여 마이크로 머신 소자 패키지에 최소한의 열응력을 미치는 소자접속 재료의 선별과 패키지 설계의 최적화를 이루고자 하였다.

• 전기전자학회논문지
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• 제20권2호
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Journal of the Korean Wood Science and Technology
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• 제45권6호
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• pp.671-681
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• 2017

Oil palm trunk (OPT) is a potential source of biomass for the production of biopellet. In the present research, biopellet were prepared from the meristem part of 25 years old OPT with various percentages of its bark (0, 10, and 30%). The highest biopellet durability was found for biopellet produced at $130^{\circ}C$ of pelletizing temperature with 30% bark content. Scanning electron microscopy (SEM) of biopellet showed the weak of particle bonding due to the low pelletizing pressure. The moisture content, unit density, ash content, and caloric value of OPT-based pellets were 3.55-5.35%, $525.56-855.23kg/m^3$, 2.76-3.44%, and 17.89-19.14 MJ/kg, respectively. The combustion profiles obtained by thermogravimetric analysis (TGA) seemed to be unaffected by the bark content on. Differential thermal analysis of TGA curve indicated different pyrolysis characteristic of hemicellulose, cellulose, and lignin.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• Design & Manufacturing
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• 제14권1호
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• pp.15-21
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• 2020

Smart systems in different application areas such as automotive, medical and consumer electronics require a novel manufacturing method of electronic, optical and mechanical functions into products. Traditional methods including mechanical assembly, bonding of plastic and electronic circuit cause the problems in large size of products and complicated manufacturing processes. In this study, thermoforming and film insert molding were applied to fabricate a dome shaped plastic part embedded with electronic circuits. The deformation of patterns printed on PET film was predicted by thermoforming simulation using T-SIM, and the results were compared with those by experiment. In order to decrease spring-back after thermoforming, the Taguchi method of design of experiment was used. Through ANOVA analysis, it was found that mold temperature was the most dominant parameter for spring-back. By using flow analysis, gate design was performed to decrease injection pressure. During film insert molding, the wash-out of ink printed on film occurred for Polycarbonate. When the resin was changed to PMMA, the wash-out disappeared due to low melt temperature.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• 전자공학회논문지SC
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• 제37권3호
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• pp.63-71
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• 2000

모든 물체에서 방출되는 적외선을 감지하여 영상신호로 만들어 주는 적외선 감지 칩은 보편적으로 적외선감지 소자와 신호 취득 회로가 각기 다른 칩으로 제작되어 하이브리드 본딩 기법을 통해 만들어 진다. 본 논문에서는 신호 취득 회로의 설계 과정과 시뮬레이션 결과를 보여 주며, 실제 제작 결과, 6V의 인가 전압에서 설계 사양에 만족하는 동작 특성을 보임을 확인하였다. 제작된 신호 취득 회로를 이용하여 적외선 감지칩을 제작하고 이를 자체 제작한 열영상 시스템에 장착하여 열영상을 구현해 보았다. 얻어진 열영상은 고온과 상온의 물체에 대해서 인식이 가능한 수준이었으며, 열영상 시스템의 잡음 특성을 좀 더 개선할 경우 더나은 열영상을 얻을 수 있으리라 기대한다.

• 한국세라믹학회지
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• 제23권4호
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• pp.27-34
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• 1986

In the present study an attempt was made to synthesize $10TiO_2$.$90SiO_2$ glass by Sol-Gel process. Tetra-ethyl-ortho-silane and titanium-iso-propoxide were used as precursors. As the mutual solvent ethanol and iso-propanol were used. TEOS was partially hydrolyzed with one-fold mole of $H_2O$ prior to the reaction with titanium-iso-propoxide to control the difference of hydrolysis rate of the two metal alkoxides. At gelling temperature higher than 6$0^{\circ}C$ it was difficult to obtain monolithic gels. At such a low temperature as 85$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Ti bonding was obtained.

• 한국결정성장학회지
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• 제10권1호
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).