• 한국정밀공학회지
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• 제26권12호
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• pp.9-17
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.661-662
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• 2010

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• Carbon letters
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• 제7권3호
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• pp.196-200
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• 2006

Graphite has hexagonal closed packing structure with two bonding characteristics of van der Waals bonding between the carbon layers at c axis, and covalent bonding in the carbon layer at a and b axis. Graphite has high tolerant to the extreme conditions of high temperature and neutron irradiations rather than any other materials of metals and ceramics. However, carbon elements easily react with oxygen at as low as 400C. Considering the increasing production of today of hydrogen and electricity with a nuclear reactor, study of oxidation characteristics of graphite is very important, and essential for the life evaluation and design of the nuclear reactor. Since the oxidation behaviors of graphite are dependent on the shapes of testing specimen, critical care is required for evaluation of nuclear reactor graphite materials. In this work, oxidation rate and amounts of the isotropic graphite (IG-110, Toyo Carbon), currently being used for the Koran nuclear reactor, are investigated at various temperature. Oxidation process or principle of graphite was figured out by measuring the oxidation rate, and relation between oxidation rate and sample shape are understood. In the oxidation process, shape effect of volume, surface area, and surface to volume ratio are investigated at $600^{\circ}C$, based on the sample of ASTM C 1179-91.

• 한국재료학회지
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• 제17권10호
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• pp.521-525
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• 2007

The microstructure and mechanical properties of an oxygen free copper processed by accumulative roll bonding(ARB) at low strain rate were studied. The copper sheets were highly strained up to an equivalent strain of ${\sim}6.4$ by ARB process at ambient temperature. The strain rate of the copper during the ARB was $2.6sec^{-1}$. The microstructure and mechanical properties of the ARB-processed copper were compared to those of the specimens processed by ARB at relatively high strain rate ($37sec^{-1}$). The microstructure and mechanical properties of the copper with ARB process was very similar to each other despite of some differences in recovery.

• 센서학회지
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• 제16권5호
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.197-205
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• 2005

RF MEMS 기술에서 패키지의 개발은 매우 중요하다. RF MEMS 패키지는 소형화, hermetic 특성, 높은 RF 성능 및 신뢰성을 갖도록 설계되어야 한다. 또한 가능한 저온의 패키징 공정이 가능해야 한다. 본 연구에서는 저온 공정을 이용한 RF MEMS 소자의 hermetic 웨이퍼 레벨 패키징을 제안하였다. Hermetic sealing을 위하여 약 $300{\times}C$의 Au-Sn 공정 접합 (eutectic bonding) 기술을 사용하였으며, Au-Sn의 조합으로 형성된 sealing부의 폭은 $70{\mu}m$이었다. 소자의 전기적 연결을 위하여 기판에 수직 via hole을 형성하고 전기도금 (electroplating) 방법을 이용하여 Cu로 채웠다. 완성된 RF MEMS 패키지의 최종 크기는 $1mm\times1mm\times700{\mu}m$이었다. 패키징 공정의 최적화 및 $O_2$ 플라즈마 애싱 공정을 통하여 접합 계면 및 via hole의 void들을 제거할 수 있었다. 또한 패키지의 전단 강도 및 hermeticity는 MIL-STD-883F의 규격을 만족하였으며 패키지 내부에서 오염 및 기타 유기 물질은 발생하지 않았다. 패키지의 삽입 손실은 2 GHz에서 0.075 dB로 매우 작았으며, 여러 종류의 신뢰성 시험 결과 패키지의 파손 및 성능의 감소는 발견되지 않았다.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• 센서학회지
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• 제15권1호
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• pp.58-64
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• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

• 접착 및 계면
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• 제13권1호
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• pp.1-8
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• 2012

EPDM에 카르복시산을 포함하는 아크릴 단량체인 methacrylic acid (MA)가 도입된 grafted EPDM을 합성하여 MA의 grafting ratio가 탄성체의 물성과 다른 고무와의 접착특성에 미치는 영향을 연구하였다. Grafted EPDM의 storage modulus는 특정온도까지는 sulfur로 가교한 EPDM vulcanizate보다 높게 유지되다가 온도가 더 높아지면 2차 결합력이 약해지면서 급격하게 감소되는 것이 관찰되었다. EPDM에 수소결합을 유도할 수 있는 반응기를 도입했을 때 grafted EPDM 분자들 간의 aggregate 형성과 그라프트된 MA의 결정성으로 인해 우수한 기계적 물성을 나타내었다. EPDM 자체는 극성이 낮고 다른 종류의 고무와 분자간 결합력이 약해서 접착이 제대로 이루어지지 않았으며 그라프트된 MA의 함량이 증가할수록 접착강도가 더 높아졌으며 MA의 grafting ratio가 10% 이상일 때에는 접착평가 시 고무시편이 부분적으로 파괴될 정도로 접착력이 우수하였다.