• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.82-87
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• 2020

The comprehensive and physics-based compact noise models for advanced CMOS devices were presented. The models incorporate important physical effects in nanoscale MOSFETs, such as the low frequency correlation effect between the drain and the gate, the trap-related phenomena, and QM (quantum mechanical) effects in the inversion layer. The drain current noise model was improved by including the tunneling assisted-thermally activated process, the realistic trap distribution, the parasitic resistance, and mobility degradation. The expression of correlation coefficient was analytically described, enabling the overall noise performance to be evaluated. With the consideration of QM effects, the comprehensive low frequency noise performance was simulated over the entire bias range.

• Journal of Magnetics
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• 제16권2호
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• 한국위성정보통신학회논문지
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• 제12권4호
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• pp.115-119
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• 2017

상호변조왜곡은 원신호의 S/N도 악화시키고 인접채널에도 간섭 영향을 미친다. 상호변조왜곡은 전력증폭기의 비선형 특성에 의해서 주로 발생된다. 비선형 특성을 갖는 전력증폭기가 메모리 효과를 갖는다면 전력증폭기에서 발생되는 상호변조왜곡은 다양하고 복잡한 형태로 발생된다. 상호변조왜곡을 개선하는 방법으로 전치왜곡기가 주로 사용된다. 전치왜곡기의 성능을 충분하게 활용하기 위해서는 전력증폭기가 갖는 메모리 효과를 줄여야 한다. 본 논문에서는 전력증폭기에서 발생하는 메모리 효과를 줄이기 위한 바이어스 회로의 설계 방법에 대해서 기술하였다. 메모리 효과를 줄이기 위해서 바이어스 회로는 신호에 대해서는 높은 임피던스를 가져야 하며, 포락선(변조신호)에 대해서는 낮은 임피던스를 가져야 한다. 더불어 신호의 2차 고조파에 대해서도 낮은 임피던스를 가져야 한다. 메모리 효과를 고려해서 설계한 바이어스 회로의 성능을 확인해 보기 위해서 170 ~ 220MHz에서 동작하는 전력증폭기를 설계 및 구현하였다. 전력증폭기에 적용한 바이어스 회로는 동작주파수 대역에서 큰 임피던스를 가지며, 포락선 신호와 신호의 2차 고조파에서는 낮은 임피던스를 갖는다. 성능 측정결과 비대칭적으로 발생되는 상호변조왜곡 성분이 3.7dB 개선됨을 알 수 있었다.

• 전기학회논문지
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• 제57권8호
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• pp.1464-1469
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• 2008

A CMOS Gm-C filter with variable cutoff frequency applicable for using in the direct conversion receiver is designed. The designed filter comprises the CMOS differential transconductors, and the gm of the transconductor is controlled by the bias voltage. This configuration can compensate variant of the cutoff frequency which could be generated by external noises, and also be used in multiband receiver. As a results of HSPICE simulation, the control range of the cutoff frequency is $1.5MHz{\sim}3.5MHz$ and the gain control range is $-2.8dB{\sim}2.6dB$. The layout of the designed 5th-order Elliptic low-pass filter is performed to fabricate a chip using $2.5V-0.25{\mu}m$ CMOS processing parameter.

• ETRI Journal
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• 제36권3호
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• pp.510-513
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• 2014

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

• 한국통신학회논문지
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• 제37권4A호
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• pp.214-218
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• 2012

본 논문에서는 FMCW(frequency modulation continuos wave) 응용에서 사용 가능한 우수한 성능의 W-band 도파관 전압조정발진기를 구현하였다. 중심주파수가 94 GHz인 도파관 전압조정발진기(VCO, voltage controlled oscillator)를 구현하기 위하여 GaAs 건 다이오드(Gunn diode) 및 버렉터 다이오드(varactor diode)와 저역통과필터(LPF, low pass filter)를 적용한 두 개의 바이어스 포스트(bias post)를 이용하였으며, 발진기의 동공(cavity)을 47 GHz에서 발진하도록 설계하여 2체배된 신호를 사용하였다. 제작된 전압조정발진기는 1.095 GHz의 대역폭, 1.69%의 오차율 특성을 갖는 590 MHz의 선형성 구간과 14.86~15.93 dBm의 출력전력 특성을 나타내었다. 위상잡음은 전 구간에서 -95 dBc/Hz(at 1 MHz offset) 이하의 우수한 특성을 얻었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1075-1078
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• 2007

Negative Bias Temperature Instability (NBTI) in Eximer Laser Annealing (ELA) based Low Temperature polysilicon (LTPS) Thin-Film Transistors (TFT) was investigated. Even though NBTI is generally appeared in devices with thin gate oxide, the TFT with gate oxide thickness of 120 nm, relatively thick, also showed NBTI effect and dynamic NBTI effect is dependent on operational frequency.

• 한국전자파학회논문지
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• 제12권1호
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• pp.65-70
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• 2001

본 연구에서는 CDMA 단말기요 Receiver MMIC를 설계하였다. 전체회로는 저잡음 증폭기, 하향 주파수 혼합기, 중간주파수 증폭기 그리고 바이어스 회로로 구성된다. 바이어스회로는 문턱전압과 전원접압의 변화에 대해 보상동작을 한다. 제안된 토폴리지는 높은 선형성과 저잡음 특성을 가진다. 설계결과는 다음과 같다. 전체 변환이득은 28.5 dB, 저잡음 증폭기의 압력은 IP3는 8 dBM, 하향주파수 혼합기의 압력 IP3는 0 dBm 이며 전체회로의 소모전류는 22.1 mA이다.

• The Journal of the Acoustical Society of Korea
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• 제22권4E호
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• pp.150-154
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• 2003

The distortion effects of microphones have been analyzed and compensated at mel-frequency feature domain. Unlike popular bias removal algorithms a linear transformation of mel-frequency spectrum is incorporated. Although a diagonal matrix transformation is sufficient for medium-quality microphones, a full-matrix transform is required for low-quality microphones with severe nonlinearity. Proposed compensation algorithms are tested with HTIMIT database, which resulted in about 5 percents improvements in recognition rate over conventional CMS algorithm.

• Journal of electromagnetic engineering and science
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• 제7권2호
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.