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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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High Performance Millimeter-Wave Image Reject Low-Noise Amplifier Using Inter-stage Tunable Resonators

  • Kim, Jihoon (Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kwon, Youngwoo (Department of Electrical and Computer Engineering, Seoul National University)
  • Received : 2013.07.09
  • Accepted : 2013.09.06
  • Published : 2014.06.01
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Abstract

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

Keywords

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