• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Macromolecular Research
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• v.11 no.1
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• pp.9-13
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• 2003

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV)F$^{2+}$ and Cl$^{2+}$ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10$^{11}$ to 3 $\times$ 10$^{14}$ ions/$\textrm{cm}^2$. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H$_2$ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF$_2$ molecules in the MeV ion-implanted PVDF samples.les.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.290-291
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, sensers, transducers, PMN-PNN-PZT ceramics were manufacrtured with the sintering temperature, and their piezoelectric and dielectric properties were investigated. At the composition ceramics sintered at $900^{\circ}C$, desity, dielectric constant$({\varepsilon}_r)$, electromechanical coupling factor(kp), piezoelectric constant$(d_{33})$ and mechanical quality factor(Qm) showed the optimal value of $7.86g/cm^3$, 1417, 0.634, 410pC/N and 1138, respectively.

• Journal of the Korean GEO-environmental Society
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• v.17 no.4
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• pp.33-37
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• 2016

The hydration process of Controlled Low Strength Material (CLSM) used for backfill is the primary factor to determine the construction period. The objective of this study is to monitor the hydration process of CLSM using the Time Domain Reflectometry (TDR) and to establish the relationship between dielectric constant and compressive strength. The CLSM specimen is composed of cement, flyash, silt, sand, accelerator, and water. The material characteristics of the CLSM including flow, unit weight, compressive strength are investigated. To measure the dielectric constant of the CLSM during the curing time, TDR probe incorporated with a mold and a reflectometer are used. Experimental results show that the dielectric constant remains constant at early stage, and then decreases as the curing time increases. In addition, the dielectric constant is related to the compressive strength in inverse power function. This paper suggests that the TDR technique may be used as a non-destructive testing method in order to estimate the compressive strength of the CLSM mixture under construction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.662-665
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• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.1
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• pp.17-24
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• 2014

In this paper, we analysed coupling coefficient between dielectric resonator of high dielectric constant and microstrip line to design for low phase noise dielectric resonator by direct coupling. Also we analysed phase noise of dielectric resonance oscillator with parallel feedback circuit to complement Q by high dielectric constant. We obtained a result from high-stability dielectric oscillator which is optimum designed through analysis of dielectric resonance oscillator phase noise and coupling coefficient. The result is that the phase noise was -83.3dBc/Hz@1KHz at 20.25GHz when we used about 3.6 coupling coefficient and ${\epsilon}_r$=30 dielectric resonator of 20.25GHz dielectric resonance oscillator. As a result, we suggested the direct-connect design method by frequency multiplication mode to prevent phase noise loss at K-Band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.847-851
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• 2014

The characteristics of dielectric constant and $tan{\delta}$ of low viscosity silicone oils with changing degree of polymerization were investigated. The result shows dipole loss mechanism at low temperature range. The dielectric loss in the range of low frequencies are predominantly of ionic nature with temperature increase. The peak of dielectric loss is the detrapping of the electrons which is were trapped in the localized level of the silicone oils at the frequency of 30 kHz. The increase of ionic conduction is attributed to the presence of ionizable oxidation products and their increased dissociation feature. The activation energy ${\Delta}H$ and dipole moment ${\mu}_d$ were increased whit increasing degree of polymerization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.