• 전기전자학회논문지
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• 제14권3호
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• pp.250-255
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• 2010

본 논문에서는 DTMOS(Dynamic Threshold voltage MOSFET) 스위칭 소자를 사용한 인터리브 방식의 전원제어 장치(PMIC)를 제안하였다. 휴대기기에 필요한 높은 출력 전압과 낮은 출력 전압을 제공하기 위하여 벅-부스트 컨버터를 사용하였다. 또한, 높은 출력 전류에서 고 전력 효율을 얻기 위하여 PWM(Pulse Width Modulation) 제어 방식을 사용하였다. 낮은 온-저항을 갖는 DTMOS를 사용하여 도통 손실을 감소시켰으며 인터리브 방식을 사용하여 출력 리플을 감소시켰다. 1mA 이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국식물생명공학회:학술대회논문집
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• 한국식물생명공학회 2005년도 추계학술대회 및 한일 식물생명공학 심포지엄
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• pp.40-64
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• 2005

Much biochemical information on peroxiredoxins (Prxs) has been reported but a genuine physiological function for these proteins has not been established. We show here that two cytosolic yeast Prxs, cPrxI and II, exist in a variety of forms that differ in their structure and molecular weight (MW) and that they can act both as a peroxidase and as a molecular chaperone. The peroxidase function predominates in the lower MW proteins, whereas the chaperone function is more significant in the higher MW complexes. Oxidative stress and heat shock exposure of yeasts causesthe protein structures of cPrxI and II to shift from low MW species to high MW complexes. This triggers a peroxidase-to-chaperone functional switch. These in vivo changes are primarily guided by the active peroxidase site residue, $Cys^{47}$, which serves as an efficient $'H_2O_2-sensor'$ in the cells. The chaperone function of the proteins enhances yeast resistance to heat shock.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• 전기전자학회논문지
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• 제14권2호
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• pp.82-89
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• 2010

본 논문에서는 기존의 벅-부스트 컨버터의 효율 보다 높은 효율을 갖는 세 개의 DTMOS 스위칭 소자를 사용한 벅-부스트 컨버터를 제안하였다. 낮은 온-저항을 갖는 DTMOS 스위칭 소자를 사용하여 전도 손실을 줄이도록 설계하였다. DTMOS 스위칭 소자의 문턱 전압은 게이트 전압이 증가함에 따라 감소하고 그 결과 표준 MOSFET보다 전류 구동 능력이 높다. 제안한 컨버터는 넓은 출력 전압 범위와 높은 전류 레벨에서 높은 전력 변환 효율을 갖기 위해 PWM 제어법을 이용하였다. 제안한 컨버터는 최대 출력전류 300mA, 입력 전압 3.3V, 출력 전압 700mV~12V, 1.2MHz의 스위칭 주파수, 최대 효율 90% 갖는다. 1mA이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

• 전기전자학회논문지
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• 제12권3호
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• pp.176-183
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• 2008

본 논문에서는 DTMOS(Dynamic Threshold voltage MOSFET) 스위칭 소자를 사용한 고 효율 전원 제어 장치 (PMIC)를 제안하였다. 높은 출력 전류에서 고 전력 효율을 얻기 위하여 PWM(Pulse Width Modulation) 제어 방식을 사용하여 PMIC를 구현하였으며, 낮은 온 저항을 갖는 DTMOS를 설계하여 도통 손실을 감소시켰다. 벅 컨버터(Buck converter) 제어 회로는 PWM 제어회로로 되어 있으며, 삼각파 발생기(Saw-tooth generator), 밴드갭기준 전압 회로(Band-gap reference circuit), 오차 증폭기(Error amplifier), 비교기(Comparator circuit)가 하나의 블록으로 구성되어 있다. 삼각파 발생기는 그라운드부터 전원 전압(Vdd:3.3V)까지 출력 진폭 범위를 갖는 1.2MHz 발진 주파수를 가지며, 비교기는 2단 연산 증폭기로 설계되었다. 그리고 오차 증폭기는 70dB의 DC gain과 $64^{\circ}$ 위상 여유를 갖도록 설계하였다. Voltage-mode PWM 제어 회로와 낮은 온 저항을 스위칭 소자로 사용하여 구현한 DC-DC converter는 100mA 출력 전류에서 95%의 효율을 구현하였으며, 1mA이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

• 한국통신학회논문지
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• 제26권11A호
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• pp.1812-1819
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• 2001

본 논문에서는 OSR=25에서 1 [MHz] 신호 대역폭, 12-비트 해상도를 만족하는 SOSOC $\Sigma$-Δ길 변조기 설계를 위하여 아날로그 비이상성 허용범위를 조사하였다. 공급전압 3.3 [V]에서 사양을 만족하는 $\Sigma$-Δ 변조기 설계를 위하여 우선 저전압에 적합한 SOSOC $\Sigma$-Δ 변조기 모델과 이득계수를 구하였다. 그리고 아날로그 비이상성인 증폭기 유한한 이득, SR, 폐루프 극점, 스위치 ON 저항 그리고 캐패시터 부정합과 같은 $\Sigma$-Δ 변조기의 성능 저하 요인들을 이상적인 $\Sigma$-Δ 변조기 모델에 첨가하여 $\Sigma$-Δ 변조기의 성능 예측과 비 이상성의 허용범위를 규정하였다. 이를 토대로 사양을 만족하는 $\Sigma$-Δ 변조기 설계 시 $\Sigma$-Δ 변조기를 구성하는 회로의 사양에 대한 지침과 $\Sigma$-Δ 변조기의 성능을 예측 할 수 있다.

• 한국정보전자통신기술학회논문지
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• 제17권4호
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• pp.266-274
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• 2024

본 논문에서는 아날로그 회로 트리밍과 보정 (calibration) 등에 필요한 데이터를 저장하는 비휘발성 메모리인 저면적 32bit PF (Poly-Fuse) OTP IP를 설계하였다. 한 개의 선택 트랜지스터에 2개의 PF를 사용하여 하나의 OTP 셀을 구성하므로 2 비트의 데이터를 프로그램할 수 있는 1셀-2비트의 multibit PF OTP 셀을 제안하였다. 제안된 1셀-2비트 PF OTP 셀의 bitcell 사이즈는 12.69㎛ × 3.48㎛ (=44.161㎛2)의 1/2로 기존 PF OTP 셀의 bitcell 사이즈에 비해 셀 면적을 33% 줄였다. 한편 본 논문에서는 제안된 multbit 셀의 동작에 맞도록 1행 × 32열 셀 어레이 회로와 코어 회로 (WL 구동회로, BL 구동회로, BL 스위치 회로와 DL sense amplifier 회로)를 새롭게 제안하였다. 제안된 multibit 셀을 사용한 32bit OTP IP의 레이아웃 사이즈는 238.47㎛ × 156.52㎛ (=0.0373㎛2)으로 기존 single bitcell을 이용한 32bit PF OTP IP 사이즈인 386.87㎛ × 144.87㎛ (=0.056㎛2)에 비해 면적을 33% 정도 줄였다. 10년의 data retention 시간을 고려하여 설계된 32bit PF OTP IP는 detection read 모드와 read 모드에 서 프로그램된 PF의 최소 센싱 저항은 테스트 칩의 post-layout 모의실험 결과 각각 10.5㏀과 5.3㏀으로 설계하였다.