• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.4
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• pp.543-550
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• 2008

This paper proposes an voltage and reactive power control methodology, which is motivated towards implementation in the korea power system. The main voltage control devices are capacitor banks, reactor banks and LTC transformers. Effects of control devices are evaluated by local subsystem's cost computations. This local subsystem is decided by 'Tier' and 'Electrical distance' in the whole system. The control objective at present is to keep the voltage profile within constraints with minimum switching cost. A robust control strategy is proposed to make the control feasible and optimal for a set of power-flow cases that may occur important event from system. This studies conducted for IEEE 39-bus low and high voltage contingency cases indicate that the proposed control methodology is much more effective than PSS/E simulation tool in deciding switching of capacitor and reactor banks.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.6
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• pp.285-291
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• 2002

In general, utility voltage is maintained at a relatively low level of Phase unbalance since a low level of unbalance can cause a significant power supply ripple and heating effects on the power system equipment. Voltage unbalance more commonly emerges in individual customer loads due to phase load unbalanced, especially where single phase power loads are used. Under unbalanced input voltages large lower order harmonics appears at the input and output ports of Power conversion devices. As the application of adjustable -speed drives (ASDs) and their integration with complex industrial processes increase, so does the need to understand how ASDs perform during voltage This paper describes a real load test to investigate the performance of 3-HP adjustable speed drives by an unbalanced voltage at the low-voltage system.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.294-299
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• 2007

This paper presents a special protection scheme, which was established in the KEPCO (Korea Electric Power Corporation) system, against a critically low voltage profile in a part of the system after a double-circuit tower outage. Without establishing the scheme, the outage triggers the operation of a zone 3 relay and trips the component. This sequence of events possibly leads to a blackout of the local system. The scheme consists of an inter-substation communication network using PITR (Protective Integrated Transmitter and Receiver) for acquisition of the substations' data, and under-voltage load shedding devices. This paper describes the procedure for determining the load shedding in the scheme and the experiences of the implementation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.11
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• pp.1512-1516
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• 2018

The power system and control system constantly reveals surge voltage such as switching surge of lighting devices and power conversion devices, operating and stops surge of rotating devices, charge & discharge surge, opening & closing surge of circuit breakers and the like. Such a surge voltages can cause damage or malfunction of the element such as CPU, Memory, semiconductor etc. In the industry, in order to protect the system from the surge voltage, a surge protector with low discharge starting voltage, fast response time, and low capacitance is required, and technical development research for that is ongoing. In this paper, in order to solve the problem of the existing GDT discharge tube not discharging from the transient voltage which is higher than the commercial voltage and lower than the discharge voltage of the discharge element, we have developed a discharge element having the control electrode & control circuit. The discharge element having the control electrode and the control circuit can control the discharge voltage according to the needs of the consumer and can satisfy the requirement of the discharge element and the technology of the surge protector downsizing technology and the surge protection technology. It is judged to be effective for development.

• IEMEK Journal of Embedded Systems and Applications
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• v.15 no.5
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• pp.205-214
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• 2020

With the recent development of hardware and software technology, interest in the development of wearable devices is increasing. In particular, wearable devices require algorithms suitable for low-power and low-capacity embedded devices. Among them, there is an increasing demand for a signal compression algorithm that reduces communication overhead, in order to increase the efficiency of storage and transmission of electrocardiogram (ECG) signals requiring long-time measurement. Because normal beats occupy most of the signal with similar shapes, a high rate of signal compression is possible if normal beats are represented by a template. In this paper, we propose an algorithm for determining the normal beat template using the template cluster and Pearson similarity. Also, the template is expressed effectively as a few vertices through linear approximation algorithm. In experiment of Datum 234 of MIT-BIH arrhythmia database (MIT-BIH ADB) provided by Physionet, a compression ratio was 33.44:1, and an average distribution of root mean square error (RMSE) was 1.55%.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.5
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• pp.641-644
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• 2021

Wearable devices and IoT are being utilized in various fields, where all systems are developing in the direction of multi-functionality, low power consumption, and high speed. In this paper, we propose a DC -DC Step-down C onverter for IoT smart devices. The proposed DC -DC Step-down converter is composed of a control block of the power supply stage. It also consists of an overheat protection circuit, under-voltage protection circuit, an overvoltage protection circuit, a soft start circuit, a reference voltage circuit, a lamp generator, an error amplifier, and a hysteresis comparator. The proposed DC-DC converter was designed and fabricated using a Magnachip / Hynix 180nm CMOS process, 1-poly 6-metal, the measured results showed a good match with the simulation results.

• International Journal of Computer Science & Network Security
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• v.23 no.11
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• pp.149-161
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• 2023

Internet of Things (IoT) is a relatively new concept that has gained immense popularity in a short period of time due to its wide applicability in making human life more convenient and automated. As an illustration: the development of smart homes, smart cities, etc. However, it is also accompanied by a substantial number of risks and flaws. IoT makes use of low-powered devices, so secure, less time-consuming and energy-intensive transmission (routing) of messages due to the limited availability of energy is one of the many and most significant concerns for IoT developers. The following paper presents a trust-based routing scenario for the Internet of Things (IoT) that exploits the past transmission record from the cupcarbon simulator's log files. Artificial Neural Network is used to quantify knowledge of trust, calculate the value of trust, and share this information with other network devices. As a human behavioural pattern, trust provides a superior method for making routing decisions. If there is a tie in the trust values and no other path is available, the remaining battery power is used to break the tie and make a forwarding decision; this is also seen as a more efficient use of the available resources. The proposed algorithm is observed to have superior energy consumption and routing decisions compared to conventional routing algorithms, and it improves the communication pattern.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.1
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• pp.19-26
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• 2011

In this paper, we designed Interpolation FIR(Finite Impulse Response) filter and 1-bit SDM(Sigma- Delta Modulator) for small digital audio speaker, which has low power consumption and high output characteristics. In order to achieve high linearity and low distortion performance of the systems, we adopt Type I Chevychev FIR filter which has equiripple characteristics in the pass band and proposed high efficient FIR filter structure. SDM is the most efficient modulation technique among the noise shaping techniques. In this paper, we implemented SDM using CIFB(Cascade of Intergrators, Feed-Back) which is generally used in DAC of small digital audio speakers. The proposed SDM structure can achieve high SNR, high-efficiency characteristics and low power consumption in mobile devices. Also considering manufacture of SoC(System on Chip), we performed simulation with Matlab and Verilog HDL to obtain optimal number of operational bits and verified a good experimental results.