• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.215-220
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• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.58-64
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• 2023

The adoption of hydrogen-powered Elec is expanding globally. Hydrogen is recognized as a potentially hazardous energy source, and safety assessment is crucial for the development of plans to supply hydrogen-powered electric buses. Hydrogen gas leakage can have a significant impact during bus operations, and continuous hydrogen leakage in hydrogen-powered vehicles can result in fatal accidents. In this study, information about hydrogen leakage is collected through sensors installed within the vehicles and is measured when the sensor detects a leak. The study also proposes the use of Pseudo Fuel Leakage (PFL, %) as an additional indicator for evaluating and monitoring hydrogen safety and leakage.

• Journal of Distribution Science
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• v.20 no.7
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• pp.107-117
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• 2022

Purpose: The scope of forensic investigations serves to identify malicious activities, including leakage of crucial corporate information. The investigations also identify security lapses in available networks. The purpose of the present study is to explore how to block distribution channels to protect illegal leakage in supply chain through digital forensic method. Research design, data and methodology: The present study conducted the qualitative textual analysis and its data collection process entails five steps: identifying and collecting data, determining coding categories, coding the content, checking validity and reliability, and analyzing and presenting the results. This methodology is a significant research method due to its high quality of previous resources. Results: Applying previous literature analysis to the results of this study, the author figured out that there are four solutions as an evidences to block distribution channels, preventing illegal leakage regarding company information. The following subtitles show clear solutions: (1) Communicate with Stakeholders, (2) Preventing and addressing illegal leakage, (3) Victims of Data Breach, (4) Focusing Solely on Technical Teams. Conclusion: There are difficult scenarios that continue to introduce difficult questions surrounding engagement with digital evidence. Consequently, it is important to enhance data handling to provide answers for organizations that suffer due to illegal leakages of sensitive information.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.481-485
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• 2002

In this study, we fabricated the PBH-LD by meltback method using the LPE. The PBH-LDs are analyzed the leakage current that flows through leakage current path like the p-n diode and p-n-p-n current blocking layer. We observed the variation of threshold current with the leakage width $W_{ι}$. As a consequence, we confirmed that the threshold current became low in the decrease of the leakage width and in the increase of the ratio of specific resistivity of leakage region to active region. We also compared between the calculated threshold current in the absence of leakage region and the measured threshold current in the device. As a result, the ratio of specific resistivity was about 0.5 in the measured LDs, which have the width of a active layer of 1.4${\mu}{\textrm}{m}$ and leakage width of 0.6${\mu}{\textrm}{m}$.

• Journal of Industrial Technology
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• v.28 no.B
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• pp.39-45
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• 2008

Temperature variation according to space and time on the inner parts of engineering constructions(e.g.: dam, slope) can be a basic information for diagnosing their safety problem. In general, as constructions become superannuated, structural deformation(e.g.: cracks, defects) could be occurred by various factors. Seepage or leakage of water through these cracks or defects in old dams will directly cause temperature anomaly. Groundwater level also can be easily observed by abrupt change of temperature on the level. This study shows that the position of seepage or leakage in dam body can be detected by multi-channel temperature monitoring using thermal line sensor. For this, diverse temperature monitoring experiments for a leakage physical model were performed in the laboratory. In field application of an old earth fill dam, temperature variations for water depth and for inner parts of boreholes located at downstream slope were measured. Temperature monitoring results for a long time at the bottom of downstream slope of the dam showed the possibility that temperature monitoring can provide the synthetic information about flowing path and quantity of seepage of leakage in dam body.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.367-370
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• 2001

This paper proposes a new deterioration diagnostic technique for power facilities by analyzing the pulse-height analysis of leakage current. Until now, various deterioration diagnostic techniques to prevent power system failures by deterioration of power facilities are suggested, and most of which measures leakage current amplitude only as a estimation parameter. In this experiment, it is known that the pulse heights of the leakage current are increased according to deterioration progress as well as there comes remarkable changes in pulse height distribution thereto. Therefore, the use of pulse height distribution in deterioration diagnostic technique makes more accurate diagnosis than the conventional method by using only leakage current value. From the application test, it is confirmed that the proposed technique has sufficient performance to diagnose deterioration of power facilities.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.40-46
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• 1998

Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstald and transmission resonance. We have found taht the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage andthe leakage can be suppreassed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant. These calculation results will be helpful for designing and flip-chip packagaing of high-frequency integrated circuits.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.415-419
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• 2014

나노스케일 MOSFET에서 leakage current는 중요한 이슈로서 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current에 어떤 영향을 미칠 것인지 시뮬레이션을 통하여 알아보았다. $Si_{1-x}Ge_x$ alloy에서 Ge의 비율이 증가할수록 유효질량이 작아졌으나 conduction band minimum의 위치는 Si에 비해 상승하였다. 이로 인해 tunneling 확률이 증가하여 $Si_{1-x}Ge_x$ alloy를 substrate로 사용할 경우 leakage current를 더욱 증가시키게 되었다.

• Journal of Magnetics
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• v.21 no.4
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• pp.644-651
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• 2016

A novel zero voltage switching (ZVS) phase shift full bridge (PSFB) converter used in geophysical exploration is proposed in this paper. To extend the ZVS ranges and increase power density of the converter, external inductor acting as leakage inductance is applied and integrated into the integrated magnetic (IM) transformer with separated secondary winding. Moreover, the loss of ZVS PSFB converter is also decreased. Besides, the analysis and accurate prediction methodology of the leakage inductance of the IM transformer are proposed, which are based on magnetic energy and Lebedev. Finally, to verify the accuracy of analysis and methodology, the experimental and finite element analysis (FEA) results of IM transformer and 40 kW converter prototypes are given.