• Journal of Convergence for Information Technology
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• v.7 no.1
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• pp.99-106
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• 2017

Research on technology security has been limited to technology leakage prevention. Companies recognize technology security as an investment. so It is a passive situation for recruitment and equipment installation. Therefore, the amount of damage caused by the technology leakage is regarded as profit, The purpose of this study is to investigate the effect of technology security on the domestic economy by using the inter-industry relations table. The inter-industry relations table was created by Vasily Leontiyev. In 1960, the Bank of Korea made it for the first time in Korea. Korea introduced the ISMS in 2001 and conducted a study on the technology security economy. Through this study, we hope that technology security will be recognized as income, not investment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.4
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• pp.718-723
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• 2006

Optical module plays an important role in the construction of high speed communication network. Laser diode is a component of optical module, and its characteristics are dependent of temperature, so many researches are reported. In this paper, we proposed the electrical equivalent circuit of PBH-LD based on the rate equations. And, the two leakage paths exit outside the active region. One path is converted pn-diode and the other path is converted two transistors using npn-Tr and pnp-Tr. In order to reduce the leakage currents, we observed the dependence of carrier concentrations of current blocking layers using PSPICE simulator.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.3
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• pp.252-259
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• 1990

This paper present new scheme for a Side Wall Masked Isolation(SWAMI) technology which take all the advatages provided by conventional LOCOS process. A new SWAMI process incorporates a sloped sidewall by reactive ion etch and a layer of thin nitride around the side walls such that both intrinsic nitride stress and volume expansion induced stress are greatly reduced. As a fabricate results, a defect-free fully recessed zero bird's beak local oxidation process can be realized by the sloped wall anisotropic oxide isolation. No additional masking step is required. The leakage current of PN diodes of this process were reduced than PN diode of conventional LOCOS process. On the other hand, the edge junction part was larger than the flat juction part in the density of leakage current.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Proceedings of the Korean Society of Computer Information Conference
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• 2021.07a
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• pp.41-44
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• 2021

In this paper, we propose a monitoring system that can monitor gas leakage concentrations in real time and forecast the amount of gas leaked after one minute. When gas leaks happen, they typically lead to accidents such as poisoning, explosion, and fire, so a monitoring system is needed to reduce such occurrences. Previous research has mainly been focused on analyzing explosion characteristics based on gas types, or on warning systems that sound an alarm when a gas leak occurs in industrial areas. However, there are no studies on creating systems that utilize specific gas explosion characteristic analysis or empirical urban gas data. This research establishes a deep learning model that predicts the gas explosion risk level over time, based on the gas data collected in real time. In order to determine the relative risk level of a gas leak, the gas risk level was divided into five levels based on the lower explosion limit. The monitoring platform displays the current risk level, the predicted risk level, and the amount of gas leaked. It is expected that the development of this system will become a starting point for a monitoring system that can be deployed in urban areas.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1611-1613
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• 1999

This paper introduces the data processing method and the measurement of the leakage current flowing through polymer insulators. For ageing diagnosis of polymer insulator, data aquisition system was developed to record the leakage current of insulator being tested. Hence, we have gained information for life time from its leakage current. the DAS is protected against over-voltage which would develop in the event of a flashover of the test sample.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.15-19
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• 2001

Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

• 유체기계공업학회:학술대회논문집
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• 2002.12a
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• pp.105-110
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• 2002

Experimental study was conducted to reveal the instability such as leakage flow and rotating stall in an axial flow fan. For this study, unsteady total pressure probe and multi-hole pressure probe were specially designed for measuring the flow field upstream and downstream of rotor. The measured pressure signal was analyzed by Single and Double Phase Locked Averaging Technique. From the result of total pressure fields at inlet and outlet of the rotor, the useful information on the structure of the stall cell in radial direction was provided. Also, detailed flow measurements were carried out with a specially designed high frequency multi-hole pressure probe, providing some insight to the leakage flow and their interation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.925-928
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• 1999

A multi-channel gas leakage monitoring system was designed and fabricated by using CPLD(complex Programmable Logic .Device) for monitoring and controlling the leakage of natural gas from supplying-pipes under the ground. Fabricated SnO$_2$thick film gas sensor elements were attached on safeguard steel plate of natural gas supplying pipes, and the local monitoring system in this study received the signal from the gas sensors. The monitoring system was implemented by using CPLD chip to reduce the development time and implement simple one chip system. The time division multi-channel system received the input signal from individual gas sensor at one of divided times by multiplexor and signal processed sequentially. The system reduced the size of peripheral circuit resulted in implementation of creditable simple system.