• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.113-118
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• 2016

In this paper, a read-in integrated circuit (RIIC) for IR scene projectors (IRSPs) adopting a sub-frame control technique is proposed, which minimizes the reduction of the apparent temperature of the IR images projected from IRSPs operating at a frame rate of 30 Hz. The proposed sub-frame control technique significantly reduces the amount of scene data loss on capacitors, which is caused by leakage currents flowing through MOSFET switches during holding periods, by dividing a unit frame into 8 sub-frames and refreshing the same scene data for each sub-frame. A current-drive RIIC was designed for the higher apparent temperature of IR radiated from the emitter, and it receives the scene data as a form of analog voltages from an external DAC. A prototype chip with a $64{\times}32$ RIIC array was fabricated using Magnachip/SKhynix $0.35{\mu}m$ 2-poly 4-metal CMOS process, and the measured maximum output data current is $230.3{\mu}A$. This amount of current ensures the projection of IR images whose maximum apparent temperature is $366.2^{\circ}C$ in the mid-wavelength IR (MWIR) when applied to a prototype emitter having a resistance of $15k{\Omega}$.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.102-108
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• 2013

In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.876-884
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• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• KIPS Transactions on Computer and Communication Systems
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• v.7 no.3
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• pp.81-90
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• 2018

Due to the dramatic advancement of IoT (Internet of Things), it is expected that tens of billions of IoT devices will be connected by the year 2024. Furthermore, as IoT technologies evolves, the security management in IoT platforms has become a critical issue. For example, there are interworking problems between heterogeneous IoT platforms caused by differences from communication protocols, security policies, etc. in each platform. In addition, unsecured interworking can cause major security issues including the information leakage. In this paper, in order to solve these problems, a security interworking architecture is proposed and implemented in both FIWARE and oneM2M, which are representative IoT platforms. First, the security architecture of FIWARE is analyzed and implemented, and then the security framework based on OAuth 2.0 is developed on Mobius platform. Finally, in order to validate the proposed security interworking architecture, a LED (Light-Emitting Diode) example, where the LED is controlled by only authorized users, is developed. The proposed architecture can be extended to the diverse IoT platforms and devices.

• Journal of Service Research and Studies
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• v.10 no.1
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• pp.17-31
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• 2020

Open banking, the global trend of the financial industry, is the driving force behind various innovations in the financial market in the future. The right policy direction and detailed tasks are important for triggering the differentiation and reunion of the financial industry. The purpose of this study is to investigate and analyze the background of open banking, domestic and international trends, and Korea's open banking policy. The policy directions and tasks for successful settlement and activation of open banking system are carefully suggested. Open banking is a policy to allow third party provider(TPP) access to bank accounts and open payment functions under the explicit consent of the customer. The opening of the open banking era is expected to begin competition and cooperation between banks and fintech companies in earnest, thus enhancing the competitiveness of the financial industry and contributing to the utility of financial consumers. To this end, policymakers should make every effort to advance open-ended financial settlement infrastructure, open banking legal grounds, and minimize side effects such as customer data leakage and poor financial system stability. Banks and fintech companies will need to focus on scattered customer financial information on a single platform and develop it into a convergence and discrimination of true financial services.

• KIPS Transactions on Computer and Communication Systems
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• v.7 no.7
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• pp.183-194
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• 2018

With the rapid development of IoT(Internet of Things) technology, various convenient services such as smart home and smart city have been realized. However, IoT devices in unmanned environments are exposed to various security threats including eavesdropping and data forgery, information leakage due to unauthorized access. To build a secure IoT environment, it is necessary to use proper cryptographic technologies to IoT devices. But, it is impossible to apply the technologies applied in the existing IT environment, due to the limited resources of the IoT devices. In this paper, we survey the classification of IoT devices according to the performance and analyze the security requirements for IoT devices. Also we survey and analyze the use of cryptographic technologies in the current status of IoT open standard platform such as AllJoyn, oneM2M, IoTivity. Based on the research of cryptographic usage, we examine whether each platform satisfies security requirements. Each IoT open platform provides cryptographic technology for supporting security services such as confidentiality, integrity, authentication an authorization. However, resource constrained IoT devices such as blood pressure monitoring sensors are difficult to apply existing cryptographic techniques. Thus, it is necessary to study cryptographic technologies for power-limited and resource constrained IoT devices in unattended environments.

• Informatization Policy
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• v.27 no.1
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• pp.72-91
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• 2020

In this study, we classified SNS into open and closed types, and empirically examined in which SNS activity the privacy paradox holds. The idea comes from the argument that privacy paradox may be observed differently in the open SNS, which is more vulnerable to the leakage of personal information due to public profiles, and the closed SNS, which is relatively less vulnerable by limiting the range of acquaintances, The results of the empirical analysis are as follows. First, in case of SNS usage, the privacy paradox holds in the overall SNS activities, but different conclusions are drawn according to open and closed SNS. In particular, it is found that as privacy concerns increase, individuals respond in a reasonable and desirable way to reduce SNS activity in the open SNS, which is more susceptible to infringement. Second, in the case of SNS activity intensity, (i) heavy users are more seriously aware of the probability of privacy infringement than light users, so there is a reasonable response to reducing the intensive margin with increasing privacy concerns, and (ii) this tendency is more clearly observed in open SNS, which is more vulnerable to privacy infringement. Accordingly, insisting that the privacy paradox is empirically established by observing only the overall SNS activities without distinguishing them into open and closed SNS may be interpreted as a "Fallacy of Composition."