• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1071-1076
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• 2003

The nonlinear properties and their stability of ZPCCD- based varistors, which are composed of ZnO P $r_{6}$ $O_{ll}$ - CoO-C $r_2$ $O_3$-D $y_2$ $O_3$-based ceramics, were investigated in the D $y_2$ $O_3$ content range of 0.0∼2.0 mol%. The incorporation of D $y_2$ $O_3$ greatly affected the nonlinear properties and the best nonlinearity was obtained from 0.5 mol% D $y_2$ $O_3$ with nonlinear exponent of 66.6 and leakage current of 1.2 $\mu$A. Further addition of D $y_2$ $O_3$ deteriorated the nonlinear properties. In stability against DC accelerated aging stress state: 0.95 $V_{1mA}$/15$0^{\circ}C$/24 h, the 0.5 mol％ D $y_2$ $O_3$-doped varistor exhibited the highest stability, in which the variation rate of varistor voltage and nonlinear exponent are -1.9% and 10.5%, respectively. The remainder varistors resulted in thermal runaway due to low density of ceramics.s.s.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.133-137
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• 1998

$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1646-1648
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• 2000

This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1322-1327
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• 2004

In the present work, a series of experiments have been performed on electro-hydrodynamic atomization of non-conducting liquid using a charge injection type nozzle. Effects of liquid flow rate, input voltage, and distance between the needle and the ground electrode (nozzle-embedded metal plate) have been examined. For fixed electrode distances, total and spray currents increase with increase of liquid flow rate and input voltage. When the distance between the needle and the ground electrode becomes closer, total, leakage and spray current increase, but the onset voltage for dielectric breakdown decreases. When the electric field strength of the liquid jet exceeds that for the air breakdown, a portion of the electric charges in the liquid jet is dissipated into the ambient air, and the charge density shows a limiting value. Atomization quality can be improved by increasing the flow rate because the higher charge density is achieved with the larger liquid velocity in addition to the enhanced aerodynamic effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.508-513
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• 2007

The electrical properties and stability of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated for different $Tb_4O_{11}$ amounts in the range of $0{\sim}1.0\;mol%$. As the $Tb_4O_{11}$ amount increased, the sintered density increased in the range of $99.1{\sim}101.1%$ of theoretical density and the average grain size decreased in the range of $7.7{\sim}4.8{\mu}m$. The varistor voltage increased in the range of $280.9{\sim}715.8V/mm$ and the nonlinear coefficient increased in the range of $26.4{\sim}44.4$ with the increased of $Tb_4O_{11}$ amount. The 0.25 mol% $Tb_4O_{11}$-doped varistors exhibited the high electrical stability, with -0.1% in variation rate of varistor voltage, -0.7% in variation rate of nonlinear coefficient, and +17.4% in variation rate of leakage current for specified dc accelerated aging stress of $0.95V_{1mA}/150^{\circ}C/24h$.