• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.1
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• pp.109-117
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• 2016

This paper is focused on the determination of friction parameter which is a predominant factor in the design of inflatable structure system. This inflatable structure system is very valuably used to protect passively and rapidly the possibilities of tunnel damages by flooding threats and unusual leakage to be occurred during and after underground infrastructure construction. In particular, this system should be necessary in subsea tunnel. This study presents the experimental results obtained from the relative friction characteristics tests of the fabric materials that constitute the inflatable structure. In order to evaluate the relative friction behaviour of the inflatable structure system, friction tests and scaled model tunnel friction tests are carried out. The friction tests are carried out to determine the friction coefficient for different surface conditions between tunnel and inflatable structure. These friction coefficients are then evaluated and compared with the result obtained from the model tunnel friction tests. Interaction behaviours between tunnel and system are also reviewed and described in this study. The results clearly show that the friction coefficients derived from scaled model slippage tests are about 12% lower than values obtained from the friction tests. In addition, this study will be necessary to verify the real friction behaviour with prototype tests before applying in practice.

• Progress in Medical Physics
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• v.16 no.3
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• pp.111-115
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• 2005

We have designed the multi channel detector for the quality assurance of clinical photon beams. The detector was composed of solid phantom inserted by six plane-parallel ionization chambers at different depth. The chamber as a mini plane parallel chamber was made of carbon coated microfilms. In this study the electrical characteristics of the six chambers in the solid phantom were evaluated using 6 MV photon beam. The leakage currents were less than 0.5 pA, reproducibility was less than 0.5$\%$, linearity was less than 0.5$\%$, and dose rate effect was less than 0.7$\%$. In addition the effect of dose variation from other chambers was estimated to maximum 0.8$\%$ approximately. The developed detector can be used for quality determination in output dosimetry or measurement of percentage depth dose approximately for clinical photon beam.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.176-176
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.876-884
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• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Korean Security Journal
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• no.2
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• pp.99-123
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• 1999

Internet related crimes are a crime which is inter-related with high specialization ${\cdot}$ technicality ${\cdot}$ leakage of information ${\cdot}$ intellectual-offence and deviant behavior. Without the accurate countermeasure, we can't achieve the desired end. So we should find out multilateral and general measure. Always crimes go in advance of the measure, so the counter measures against, computer crime can not be final. Nevertheless, we can't be careless in making the measure, but we should always consider a counter measure. 1995. 12. 29. our country revised criminal law and consolidated direct provisions, especially on the computer-hacking. But, inspite of the revision, especially on the computer-hacking. But, inspite of the revision, we have many problems'. So, first of all, through the positive and empirical study, we should revise criminal law and computer crime related provisions systematically. As the aspects and techniques of internet related crimes are always changing with the development of computer technology, there will be many problems with principle of legality, when we apply the existing abstract provisions to the new crime. We can not be lazy in studying the emerging internet related crimes and taking concrete shape of the provision. And it will be a big help to that desirable to import the foreign provision without consideration of our reality. Without the positive and empirical study on internet related crimes, sometimes important crime will be out of reach of the punishment. Due to these day's development of computer and technology of communication, the personal computers are widely supplied and especially PC communication and exchange of the informations became the most important function. With the advent of internet, new aspects of crimes are appearing. Up to now, the fraud by using the computer or the interference in the execution of duty by the illegal operation of computer was the leading aspects of computer crime, but nowadays with the advent of internet, database crime or network crime like the computer hacking became the important aspects of internet related crimes. These new aspects of internet related crimes are defusing into domains of traditional crimes. Nevertheless to follow and punish the acts on the internet is not technically easy, and as it is emerging international shape, to settle it by international law is not that easy. Harmful acts in the information-oriented society are very diverse in kinds and aspects, and it is difficult to enumerate. The point is that among the new acts in the information-oriented society we should decide which acts are to be punished and which acts are not to be punished. It is needless to say that the criminal law should be the last resort. But owing to the characters of the characteristics of the information-oriented society, when the traditional standards can be applied, the question of what is the basis and how it can be applied in a concrete way is not settled. And if it cannot be applied, how can we make new standard is also an unsettled question.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2000

One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than $200^{\circ}C$ and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after $150^{\circ}C$. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ at sensing resistor. The simulated ${\gamma}_{pT}$ of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.