• 한국자기학회지
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• 제3권4호
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• pp.320-324
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• 1993

스퍼터된 자기기록매체 Co-10at%Cr-2at%Mo/Cr 자성박막의 제조조건이 미세구조와 자기적특성에 미치는 영향을 조사하였다. 기판의 온도는 상온-$250^{\circ}C$로 하였으며 Cr하지층과 CoCrMo층의 두께는 각각 $1000-2500\AA$, $300-800\AA$이었다. CoCrMo층의 두께가 $500{\AA}-800{\AA}$ 증가함에 따라 결정립은 미세화 되었으며 균일한 조직을 나타냈다. 보자력은 기판의 온도, CoCrMo자성층, Cr하지층의 두께 를 증가시켰을때 향상되었다. 기판온도가 $250^{\circ}C$, 자성층의 두께가 $700\AA$, Cr 하지층의 두께가 $1000\AA$일때 880 Oe의 보자력을 나타냈다.

• 한국조리학회지
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• 제7권2호
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• pp.123-132
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• 2001

The contents of the pastry margarine were 30, 50, 70, 90 and 110% based on baker's %, and the layers of the dough were 18, 27, 36, 48 and 64 in danish pastry product In order to analyse on the effect of the theoretical one layer thickness of the pastry margarine, the volume, quality and sensory evaluation of the products have been carried out. The results as follows ; 1) Best volume was showed that the thickness of the dough was 5mm and the thickness of one layer was 0.039mm. 2) When the content of the pastry margarine was 30% and the thickness of one layer was 0.014mm(48 layers), when 50%, 0.039mm(27 layers), when 70%, 0.038(36 layers), when 90%, 0.034(48 layers) and when 110%, 0.039(48 layers), best volume was showed. 3) In the case when the content of pastry margarine was 70% and the thickness of one layer was 0.038mm(36 layers), as well as 110%, 0.039mm(48 layers), the taste were showed 5%, better than when 30%, 0.014(27 layers) in the sensory evaluation. Flavor and mouth feel was the same results. 4) For the best quality products, the content of the pastry margarine and the layers of the dough were very important.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

• Current Photovoltaic Research
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• 제5권1호
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• pp.28-32
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• 2017

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 춘계학술대회 논문집
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• pp.152-155
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• 2004

Effects of sliding speed, applied load, counterpart radius and thickness of PMMA (Poly Methyl Methacrylate) coating layers on their dry sliding frictional and wear behavior were investigated. Sliding wear tests were carried out using a pin-on-disk wear tester. The PMMA layer was coated on Si wafer by a sol-gel technique with two different thicknesses, $1.5{\mu}m\;and\;0.8{\mu}m$. AISI 52100 bearing steel balls were used as a counterpart of the PMMA coating during the wear. Normal applied load and sliding speed were varied. Wear mechanisms were investigated by examining worn surfaces by an SEM. Under most of sliding test conditions, the thicker layer with the thickness of $1.5{\mu}m$ showed lower fiction coefficient than the thinner layer. Effects of sliding speed and counterpart's radius on the frictional behavior were varied depending on the thickness of the coating layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1204-1207
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• 2009

We investigated the device performance of bulk heterojunction solar cells depending on the active layer thickness. For the systematic comparison, the polymer solar cells comprising RR-P3HT:PCBM (1:0.8 (wt%:wt%)) blend films with different thickness were characterized by impedance spectroscopy, and J-V measurement in dark and solar simulated illumination. The device with 120 nm thickness of active layer exhibited maximum power conversion efficiency of 3.5 % under AM 1.5 100mW/$cm^2$ illumination condition.

• Geomechanics and Engineering
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• 제5권1호
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• pp.1-15
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• 2013

Pressure transducers are increasingly used within soil mass or at soil-structure interface for appraisal of stresses acting at point of installation. Calibration of pressure transducers provides a unique relationship between applied pressure and voltage or strain sensed by transducer during various loading conditions and is crucial for proper interpretation of results obtained from pressure transducers. In the present study an in-house calibration device is used to calibrate pressure transducers and the study is divided into two parts: 1) demonstration of developed calibration device for fluid and in-soil calibration of pressure transducers; 2) effect of soil layer thickness on the earth pressure cell (EPC) output. Results obtained from the present study revealed successful performance of the developed calibration device, and significant effect of sand layer thickness on the calibration results. The optimum sand layer thickness is obtained as 1.5 times the diameter of EPC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.535-536
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• 2005

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).