• Bulletin of the Korean Chemical Society
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• 제24권4호
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• pp.437-440
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• 2003

In a mediator-aided microbial fuel cell, the choice of a proper mediator is one of the most important factors for the development of a better fuel cell system as it transfers electrons from bacteria to the electrode. The electrochemical behaviors within the lipid layer of two representative mediators, thionin and safranine O both of which exhibit reversible electron transfer reactions, were compared with the fuel cell efficiency. Thionin was found to be much more effective than safranine O though it has lower negative formal potential. Cyclic voltammetric and fluorescence spectroscopic analyses indicated that both mediators easily penetrated the lipid layer to pick up the electrons produced inside bacteria. While thionin could pass through the lipid layer, the gradual accumulation of safranine O was observed within the layer. This restricted dynamic behavior of safranine O led to the poor fuel cell operation despite its good negative formal potential.

• Current Optics and Photonics
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• 제2권2호
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• pp.119-124
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• 2018

The errors in retrieved aerosol backscattering coefficients due to different lidar ratios are analyzed quantitatively in this paper. The actual calculation shows that the inversion error of the aerosol backscattering coefficients using the Fernald backward-integration method increases with increasing inversion distance. The greater the error in the lidar ratio, the faster the error in the aerosol backscattering coefficient increases. For the same error in lidar ratio, the smaller actual aerosol backscattering coefficient will get the larger relative error of the retrieved aerosol backscattering coefficient. The errors in the lidar ratios for dust or the cirrus layer have great impact on the retrievals of backscattering coefficients. The interval between the retrieved height and the reference range is one of the important factors for the derived error in the aerosol backscattering coefficient, which is revealed quantitatively for the first time in this paper. The conclusions of this article can provide a basis for error estimation in retrieved backscattering coefficients of background aerosols, dust and cirrus layer. The errors in the lidar ratio of an aerosol layer influence the retrievals of backscattering coefficients for the aerosol layer below it.

• 한국조경학회지
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• 제38권1호
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• pp.129-136
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• 2010

본 연구는 다층구조의 USGA 지반 및 단층구조의 약식지반에서 난지형 및 한지형 잔디의 대취축적 차이를 평가하고자 시작되었다. USGA 지반은 전체 45cm 깊이로 이루어진 구조로 식재층 30cm, 중간층 5cm, 배수층 10cm로 조성하였고, 약식지반은 전체가 30cm 깊이로 식재층으로만 조성된 지반이다. 공시 초종은 9종류(난지형 3, 한지형 6)의 처리구를 각 지반에 사용하였으며, 시험구 배치는 9종류의 처리구를 난괴법 3반복으로 배치하였다. 통계분석 시 처리구 평균간 유의성 검정은 Duncan의 다중범위검정으로 실시하였다. 잔디지반에 따라 대취축적 정도는 달랐으며 USGA 지반에서 대취층은 약식지반에 비해 9% 정도 높았다. 초종별 대취축적은 대체적으로 난지형 들잔디가 한지형 잔디에 비해 높았지만, 그 차이는 지반에 따라 다소 다르게 나타났다. 한지형에 비해 난지형 들잔디의 대취층은 USGA 지반에서 34~87% 그리고 약식지반에서 16~75% 정도 더 높게 나타났다. 들잔디 품종간 차이는 USGA 지반 및 약식지반에서 모두 중지 품종이 각각 3.58cm 및 3.21cm로 대취축적이 가장 크게 나타났다. 한지형 잔디 초종 간 차이를 보면 USGA 지반에서는 켄터키 블루그래스가 2.53cm로 가장 높았으며, 톨 훼스큐와 퍼레니얼 라이그래스는 각각 2.05cm 및 1.98cm로 나타났다. 약식지반에서도 한지형 잔디의 대취축적은 USGA 지반과 비슷한 경향으로 나타났다. 켄터키 블루그래스의 대취층이 가장 높았던 것은 켄터키 블루그래스가 지하경 생장(R-type)을 하기 때문에 주형생장(B-type)을 하는 퍼레니얼 라이그래스 및 톨 훼스큐 보다 왕성한 생장으로 인해 유기물 생성속도가 더 빠르기 때문이라 판단되었다. 잔디그라운드에서 적정 수준의 대취는 내마모성 증가 및 쿠션효과 등의 이점이 있기 때문에 켄터키 블루그래스는 잔디품질, 환경적응력 및 물리적 특성뿐만 아니라 선수 보호차원에서도 우수한 초종이라 판단되었다. 하지만, 잔디대취의 과다 축적 시 건조 피해, 환경스트레스 내성 저하, 병충해 피해 증가 등 여러 가지 문제점이 나타날 수 있어 적정 수준의 두께를 유지하는 것이 중요하므로 잔디관리 시 지반 및 초종에 따라 차별화 된 관리방법이 필요한 것으로 판단되었다.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Journal of Microbiology and Biotechnology
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• 제10권4호
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• pp.518-521
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• 2000

Aspergillus niger is capable of metabolizing dimethyphthalate. The maximum weight of mycelium wa observed afterabout 6-8 dys of incubation. A TLC analysis revealed the accumulation of metabolites in the resting cell culture. Monomethylphthalate, phthalate, and protocatechuate were shown to be the intermediates by thin layer chromatographic and spectrophotometric analyses. The fungus metabolized dimethylphthalate through monomethylphthalate, phthalate, and protocatechuate as evidenced by the oxygen uptake and an enzymatic analysis. The terminal aromatic metabolite, protocatechuate, is metabolized via the ortho-cleavage pathway.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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• pp.165-168
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• 2005

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

• 한국약용작물학회지
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• 제17권3호
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• pp.204-209
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• 2009

This study was conducted to assess water movement in paddy-upland rotation soil scheduled for ginseng cultivation through the measurement of infiltration and permeability of soil water. Soil sample was divided with four soil layers. The first soil layer (to 30cm from top soil) was loamy sand, the second and the third soil layers (30$\sim$70 ㎝) were sand, and the fourth (< 120 ㎝) was sandy loam. The soil below 130 ㎝ of fourth soil layer was submerged under water. The shear strength, which represents the resisting power of soil against external force, was 3.1 kPa in the first soil layer. This corresponded to 1/8 of those of another soil layer and this value could result in soil erosion by small amount of rainfall. The rates of infiltration and permeability depending on soil layers were 39.86 cm $hr^{-1}$ in top soil, 2.34 cm $hr^{-1}$ in 30$\sim$70 ㎝ soil layer, 5.23 cm $hr^{-1}$ and 0.18 cm $hr^{-1}$ in 70$\sim$120 ㎝ soil layer, with drain tile, and without drain tile, respectively. We consider that ground water pooled in paddy soil and artificial formation of soil layer could interrupt water canal within soil and affect negatively on water movement. Therefore, we suggest that to drain at 5 m intervals be preferable when it makes soil dressing or soil accumulation to cultivate ginseng in paddy-upland rotation soil to reduce failure risk of ginseng cultivation.

• 전자공학회논문지A
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• 제31A권3호
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.133-133
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• 2003

최근에 강유전체 매체와 원자력 현미경 (Atomic Force Microscopy, AFM)을 이용한 초고밀도 정보 저장 장치에 대한 연구가 활발히 진행되고 있다. 이와 아울러 나도 크기의 도메인에 대하 연구에 있어서 PZT 박막의 분극 방향에 따른 SrRuO$_3$의 저항 변화를 AFM 탐침을 이용하여 감지하는 방법을 제안하였다. 본 연구에서는 Metal tip/semiconductor/barrier oxide/ferroelectric 구조에서 강유전체 분극에 의한 저항 변화의 가능성을 실험하고자, 이와 등가 구조인 Pt tip/n-Si/SiO$_2$ 구조에서 Pt 탐침과 반도체 층 사이의 I-V 특성을 측정함으로써, 게이트 전압에 따른 반도체 층의 저항변화에 대해서 분석해 보았다. 그 결과 게이트 전압에 따라서 과밀 지역 (accumulation layer)과 공핍 지역 (depletion layer)이 형성됨에 따라서 반도체 층의 정항이 변하여 I-V 특성이 변하게 됨을 관찰하였으며, 이 결과로부터 분극 방향에 따라서도 반도체 층의 저항이 변할 수 있음을 알 수 있었다.