Dependence of the Thickness of Spacer Layers on the Current Voltage Characteristics of DB Resonant Tunneling Diodes Analyzed with a Self-Consistent Method

스페이서층 두께변화에 따른 공명터널링 다이오드에서 전류-전압 특성의 자기무모순법에 의한 해석

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.