• Title/Summary/Keyword: Lattice oxygen

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A study of the synthesis and the properties on microwave dielectric material of $BaO-Sm_2O_3-TiO_2$ system ($BaO-Sm_2O3-TiO_2$계 마이크로파 유전체의 합성 및 그 특성에 관한 연구)

  • 이용석;김준수;이병하
    • Electrical & Electronic Materials
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    • v.10 no.3
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    • pp.274-283
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    • 1997
  • These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........

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Characteristics of LaCo1-xNixO3-δ Coated on Ni/YSZ Anode using CH4 Fuel in Solid Oxide Fuel Cells

  • Kim, Jun Ho;Jang, Geun Young;Yun, Jeong Woo
    • Journal of Electrochemical Science and Technology
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    • v.11 no.4
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    • pp.336-345
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    • 2020
  • Nickel-doped lanthanum cobalt oxide (LaCo1-xNixO3-δ, LCN) was investigated as an alternative anode material for solid oxide fuel cells. To improve its catalytic activity for steam methane reforming (SMR) reaction, Ni2+ was substituted into Co3+ lattice in LaCoO3. LCN anode, synthesized using the Pechini method, reacts with yttria-stabilized zirconia (YSZ) electrolyte at high temperatures to form an electrochemically inactive phase such as La2Zr2O7. To minimize the interlayer by-products, the LCN was coated via a double-tape casting method on the Ni/YSZ anode as a catalytic functional layer. By increasing the Ni doping amount, oxygen vacancies in the LCN increased and the cell performance improved. CH4 fuel decomposed to H2 and CO via SMR reaction in the LCN functional layer. Hence, the LCN-coated Ni/YSZ anode exhibited better cell performance than the Ni/YSZ anode under H2 and CH4 fuels. LCN with 12 mol% of Ni (LCN12)-modified Ni/YSZ anode showed excellent long-term stability under H2 and CH4 conditions.

Research for Deposition of $CeO_2$ Buffer Layer on Coated Conductor by Electron Beam Evaporation (전자빔 증발법에 의한 박막형 고온초전도체의 $CeO_2$ 버퍼층 증착 연구)

  • Lee, J.B.;Park, S.K.;Kim, H.J.;Moon, S.H.;Lee, H.G.;Hong, G.W.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.123-127
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    • 2010
  • The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $\Delta\phi$ values of ${\sim}8.9^{\circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{\sim}16\;{\AA}/sec$. During deposition, the change of oxygen partial pressure(${\rho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{\circ}C$ with superior $\Delta\phi$ and $\Delta\omega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{\circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $\Delta\phi$ value of $5.5^{\circ}$, $\Delta\omega$ value of $2^{\circ}$ and Ra value of 2.2 nm.

Growth and characterizations of INAlAs epilayers and InGaAs/INAlAs quantum well structures by low pressure metalorganic chemical vapor deposition (저압 유기금속 화학증착법을 이용한 InAIAs 에피층과 InGaAs/InAIAs 양자 우물 구조의 성장과 분석)

  • 유경란;문영부;이태완;윤의준
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.328-333
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    • 1998
  • Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

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Structure of epitaxial MgO layers on TiC(001) studied by time-of-flight impact-collision ion scattering spectroscopy (비행시간형 직충돌 이온산란 분광법을 사용한 TiC(001)면에 성장된 MgO막의 구조해석)

  • Hwang, Yeon;Souda, Ryutaro
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.181-186
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    • 1997
  • Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown MgO layers on a TiC(001). The hetero-epitaxial MgO layer was able to be deposited by thermal evaporation of magnesium onto the TiC(001) surface and subsequent exposure of oxygen at room temperature. A slight heating of the substrate at around $300^{\circ}C$ was necessary to overcome a thermal barrier for the ordering. The well-ordered MgO structure was confirmed with the 1$\times$1 LEED pattern. TOF-ICISS was useful in studying interface structure between oxide and substrate. The results revealed that the MgO layer is formed at the on-top sites of the TiC(001) substrate and the lateral lattice constant of MgO layer is the same as that of the TiC substrate. The MgO was deposited within two layers on the most parts of the surface.

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Synthesis of Tetragonal Barium Titanate Powder by Solvothermal Technique (용매열법에 의한 정방정 티탄산 바륨 분말의 합성)

  • Kwon, Soon-Gyu;Choi, Kyoon;Pee, Jae-Hwan;Choi, Eui-Seok
    • Journal of the Korean Ceramic Society
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    • v.42 no.2 s.273
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    • pp.123-126
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    • 2005
  • Barium Titanate (BT) powders were synthesized by solvothermal method with an ethanol as a solvent. The average particle size was increased with the feedstock concentration: the size was 59 nm at $6.25{\times}10^{-2}$ M and 89 nm at 0.5 M. The sample obtained at 0.5 M concentration was analysed by Rietveld refinement and the mole fraction of tetragonal phase was $75.5\%$ and lattice parameter of tetragonal phase was a=0.3999 (nm), c=0.4032 (nm), and cubic phase was a=0.4015 (nm). TEM analysis for the samples with condition of annealing at $500^{\circ}C$ for I h showed that hydroxyl ions on oxygen sites were not found for these experimental conditions.

Effects of Y2O3 Addition on Densification and Thermal Conductivity of AlN Ceramics During Spark Plasma Sintering (Y2O3 첨가가 AlN 세라믹스의 방전 플라즈마 소결 거동 및 열전도도에 미치는 영향)

  • Chae, Jae-Hong;Park, Joo-Seok;Ahn, Jong-Pil;Kim, Kyoung-Hun;Lee, Byung-Ha
    • Journal of the Korean Ceramic Society
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    • v.45 no.12
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    • pp.827-831
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    • 2008
  • Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.

Inorganic Printable Materials for Thin-Film Transistors: Conductor and Semiconductor

  • Jeong, Sun-Ho;Song, Hae-Chon;Lee, Byung-Seok;Lee, Ji-Yoon;Choi, Young-Min;Ryu, Beyong-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.18.2-18.2
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    • 2010
  • For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

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HYPERSPECTRAL IMAGERY AND SPECTROSCOPY FOR MAPPING DISTRIBUTION OF HEAVY METALS ALONG STREAMLINES

  • Choe, Eun-Young;Kim, Kyoung-Woong;Meer, Freek Van Der;Ruitenbeek, Frank Van;Werff, Harald Van Der;Smeth, Boudewijn De
    • Proceedings of the KSRS Conference
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    • 2007.10a
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    • pp.397-400
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    • 2007
  • For mapping the distribution of heavy metals in the mining area, field spectroscopy and hyperspectral remote sensing were used in this study. Although heavy metals are spectrally featureless from the visible to the short wave infrared range, possible variations in spectral signal due to heavy metals bound onto minerals can be explained with the metal binding reaction onto the mineral surface. Variations in the spectral absorption shapes of lattice OH and oxygen on the mineral surface due to the combination of heavy metals were surveyed over the range from 420 to 2400 nm. Spectral parameters such as peak ratio and peak area were derived and statistically linked to metal concentration levels in the streambed samples collected from the dry stream channels. The spatial relationships between spectral parameters and concentrations of heavy metals were yielded as well. Based on the observation at a ground level for the relationship between spectral signal and metal concentration levels, the spectral parameters were classified in a hyperspectral image and the spatial distribution patterns of classified pixels were compared with the product of analysis at the ground level. The degree of similarity between ground dataset and image dataset was statistically validated. These techniques are expected to support assessment of dispersion of heavy metal contamination and decision on optimal sampling point.

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Refinement of Crystalline Boron and the Superconducting Properties of $MgB_2$ by Attrition Ball Milling (어트리션 볼 밀링에 의한 보론 분말의 미세화 및 $MgB_2$의 초전도특성)

  • Lee, J.H.;Shin, S.Y.;Jun, B.H.;Kim, C.J.;Park, H.W.
    • Progress in Superconductivity
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    • v.10 no.1
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    • pp.23-28
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    • 2008
  • We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the $MgB_2$ pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the $MgB_2$ that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the $B_{2}O_{3}$ peak became stronger in the powders, resulting in an increase in the amount of MgO within the $MgB_2$ volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density ($J_c$), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

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