• Journal of IKEEE
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• v.28 no.2
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• pp.239-242
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• 2024

This paper proposed an ESD protection device that improved the current driving ability through Self-bias than the existing ESD protection device. The new proposed structure is based on the LRSCR structure and adds an N+ diffusion region, and reduces resistance by connecting the gate and the P+ diffusion region. As a result, it was confirmed that the proposed ESD protection device exhibits a trigger voltage of 11.8V and a holding voltage of 5.9V. It can be used in 5V applications for low voltage and is expected to have excellent current driving capability.

• Journal of IKEEE
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• v.26 no.3
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• pp.520-523
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• 2022

In this paper, an ESD protection device with a simpler structure than the existing ESD protection device is proposed. The proposed new structure operates an additional NPN parasitic bipolar transistor by adding an N+ diffusion region and connecting it to the bridge region, thereby lowering the current gain. As a result, it was confirmed that the proposed ESD protection device has a trigger voltage of 10.8V and a holding voltage of 6.1V. It is expected to have reliability for 5V applications and is expected to have high tolerance characteristics.