• ETRI Journal
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• v.42 no.5
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• pp.781-789
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• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.872-882
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• 1994

In this paper, the Low Noise Amplifier(LNA) is designed and fabricated to include a band pass filter characteristics considering the antenna system characteristics according to the transmitting and receiving signal level of communication satellite transponder. As an example, a 2-stage low noise amplifier and a 4-stage amplifier and designed, fabricated and measured at 14,0~14.5GHz of receiving frequency band. This fabricated LNA has shown the gain with very good flatness within pass-band, and its gain decreases rapidly out of band resulting in supperssion of the transmitting signal power leakage. It has shown the 20.3dB +- 0.1dB of pass-band gain, the 1.44dB +-0.04dB of noise figure and the 14dB rejection out of band(12.25~12.75GHz). The gain flatness, noise figure and group delay of this 2-stage LNA satisfactorily met the simulation results. And the fabricated 4-stage amplifier has shown the more than 42dB of pass-band gain, the +-0.25dB of flatness and the 28dB of the rejection effect for transmitting power leakage. The 2-stage LNA and 4-stage amplifier, in this paper, will bring a design margin for the input filter and also result in the system cost reduction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.198-206
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• 2011

This paper presents a new programmable compensation circuit (PCC) for a System-on-Chip (SoC). The PCC is integrated with $0.18-{\mu}m$ BiCMOS SiGe technology. It consists of RF Design-for-Testability (DFT) circuit, Resistor Array Bank (RAB) and digital signal processor (DSP). To verify performance of the PCC we built a 5-GHz low noise amplifier (LNA) with an on-chip RAB using the same technology. Proposed circuit helps it to provide DC output voltages, hence, making the RF system chain automatic. It automatically adjusts performance of an LNA with the processor in the SoC when it goes out of the normal range of operation. The PCC also compensates abnormal operation due to the unusual PVT (Process, Voltage and Thermal) variations in RF circuits.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.873-876
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• 2005

A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

• Electronics and Telecommunications Trends
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• v.16 no.1 s.67
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• pp.56-70
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• 2001

마이크로파대 이상의 높은 RF 전파는 신호레벨이 비교적 작고 간섭현상에 매우 민감한 특성을 가지고 있다. 따라서 이러한 미소한 입력전파의 수신시 수신기 전체의 감도를 높이고 잡음을 저감시킬 목적으로 사용되는 고주파 증폭기가 저잡음 증폭기이다. 본 고에서는 LNA의 기본적 특성분석과 지능형교통시스템에 응용되는 5.8GHz대 단거리전용통신용 LNA를 구현하기 위한 기본 FET 증폭기의 전기적 특성을 연구하고 직렬 궤환에 의한 최소잡음과 최소 입력 정재파비의 최적 설계 파라미터를 도출하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.754-759
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• 2016

A transformer feedback low-noise amplifier (LNA) is implemented in a standard $0.18{\mu}m$ CMOS process, which exploits drain-to-gate transformer feedback technique for wideband input matching and operates across entire 3~5 GHz ultra-wideband (UWB). The proposed LNA achieves power gain above 9.5 dB, input return loss less than 15.0 dB, and noise figure below 4.8 dB, while consuming 8.1 mW from a 1.8-V supply. To the authors' knowledge, drain-to-gate transformer feedback for wideband input matching cascode LNA is the first adopted technique for UWB application.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.121-124
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• 2009

In this paper, the techniques and design focus of flexible gain coltrol of LAN(Low Noise Amplifier) using the TSMC 0.18um CMOS process. The design frequency set up a standard on 2.4GHz that is used in Zigbee system. The design concepts a basic Cascode LNA techniques and a swiching circuit consisted of 4 NMOS of load resistance, which convert the output impedenceby tuning on or off. The result show the gain change by NMOS operated swich. The simulation result is that Gain is 14.07dB-16.79dB and NF(Noise Figure) is 1.06dB-1.09dB.

• 한국ITS학회:학술대회논문집
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• v.2006 no.10
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• pp.300-303
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• 2006

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.176-183
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• 2004

In this paper, two-stage low noise amplifier(LNA) for S-band is designed and implemented using ATF54143 HEMT of HP CO. In order to get noise figure and input VSWR to be wanted, it is considered input VSWR and noise figure simultaneously in matching-circuit designing. The fabricated two-stage low noise amplifier has the gain of 27.8dB, input VSWR and output VSWR under 1.5.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.16-20
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• 2002

This paper describes the resistive FET mixer with low IF for the 4-Ch DBF(Digital Beam Forming) receiver with LNA(Low Noise Amplifier). This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 2.09 ㎓, 2.08 ㎓ and 10㎒, respectively. The RF input power, LO input power and Vgs are used -10㏈m, 6㏈m and -0.4 V, respectively. In the 4-Ch resistive FET mixer with LNA, the measured IF and harmonic components of 10㎒, 20㎒, 2.09㎓ and 4.17㎓ are about -12.5 ㏈m, -57㏈m, -40㏈m and -54㏈m, respectively. The IF output power observed at each channel of 10㎒ is about -12.5㏈m and it is higher 27.5 ㏈m than the maximum harmonic component of 2.09㎓. Each IF output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.