• The Journal of Korean Association of Computer Education
• /
• v.3 no.1
• /
• pp.161-168
• /
• 2000

In the 21st century, we need to educate students who can perform their learning activity by themselves through free investigation and gathering information instead of providing a piece of knowledge to them directly. It is suggested that we should use Internet to bring up students who have the ability to study self-directedly. In this study, we designed a virtual English conversation class and implemented it using Web and DBMS to improve the students' self-directed learning ability who study English conversation in high school.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.281-282
• /
• 2006

This paper proposed a method of the camera calibration for noncontact measure of badly illumination. The method with a semi-automation camera calibration, The user designates minimum 4 points in calibration pattern. The Perspective transformation predicts the remaining point calibration pattern. It uses at input value of the Tsai and it searches a better point, When being smaller allowable error than until, it repeats and it puts out a good calibration result.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2005.05b
• /
• pp.505-508
• /
• 2005

Concrete has a void, which exists as one of defect in concrete. If the porosity of concrete increases, durability of concrete decreases. In this paper, to improve surface void of concrete, surface penetration sealers are applied to specimen. And it were investigated that the resistances of chloride penetration and freezing and thawing for concrete with surface penetration sealer of two types. According to the results, surface penetration sealer has not show a harmful influence on strength and resistance of freezing and thawing. Also, B type surface penetration sealer was more superior in resistance of chloride penetration.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2008.04a
• /
• pp.953-956
• /
• 2008

The purpose of this study is to ascertain the void ratio, permeability coefficient and compressive strength of porous polymer concretes with unsaturated polyester. The porous polymer concretes using unsaturated polyester with polymer binder contents of 3.5, 4.0, 4.5 and 5.5% are prepared, and tested for void ratio, permeability coefficient and compressive strength. As a result, void ratio and permeability coefficient of porous polymer concrete decrease with increasing polymer binder content. However, the compressive strength of porous polymer concrete increase with increasing polymer binder content. The compressive strength of porous polymer concrete decrease with increasing permeability coefficient.

• International Journal of Fuzzy Logic and Intelligent Systems
• /
• v.5 no.3
• /
• pp.189-195
• /
• 2005

One of the major components of any pervasive system is its proactive behavior. Various models have been developed to provide system wide changes which would enable proactive behavior. A major drawback of these approaches is that they do not address the need to make use of existing applications without modifying the applications. To overcome this drawback, a middleware architecture called 'Concord' is proposed. Concord is based on a simple model which consists of Lookup Server and Database. The rewards for this simple model are many. First, Concord uses the existing computing infrastructure. Second, Concord standardizes the interfaces for all services and platforms. Third, new services can be added dynamically without any need for reconfiguration. Finally, Concord consists of Database that can maintain and publish the active set of available resources. Thus Concord provides a solid system for integration of various entities to provide seamless connectivity and enable proactive behavior.

• ETRI Journal
• /
• v.27 no.4
• /
• pp.449-452
• /
• 2005

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

• ETRI Journal
• /
• v.37 no.5
• /
• pp.951-960
• /
• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of Institute of Control, Robotics and Systems
• /
• v.8 no.2
• /
• pp.136-141
• /
• 2002

The electrical characteristics of solid state devices such as BJT(Bipolar Junction Transistor) and MOSFET, etc, are altered by impinging nuclear radiation and temperature in the space environment. This phenomenon is well known and has been studied extensively since the early 1960's when satellites were first being designed and used in the United States. However, the studies and the developments of radiation hardening technologies for the electronic components at the industrial fields in our country has not been popular so far. The worst case design technology in the electrical circuit is required for the appropriate operation of solid state devices in the space environment. In this paper, the interface circuit used in KOMPSAT(Korea Multipurpose Satellite), which is now being operated since the one was launched in 1999, is optimally designed to accomodate the worst case design and radiation effect.

• Journal of IKEEE
• /
• v.19 no.2
• /
• pp.232-236
• /
• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• Journal of IKEEE
• /
• v.17 no.2
• /
• pp.129-134
• /
• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.