• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1212-1215
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• 2009

The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2895-2898
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• 2009

The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.9
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• pp.2133-2141
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• 1995

The thermo-mechanical fatigue tests were performed on the specimens extracted from 1.5Cr-0. 67Mo-0.33V alloy. The characteristics of thermo-mechanical fatigue crack propagation were examined and reviewed in view of fracture mechanics. The results obtained from the present study are summarized as follows : (1) The propagation characteristics of isothermal low-cycle fatigue crack are dominated by .DELTA.J$_{f}$ in case of PP waveform, and .DELTA.J$_{c}$ in case of CP waveform. (II)The propagation characteristics of thermo-mechanical fatigue crack are dominated by .DELTA.J$_{c}$ for in-phase case, and by .DELTA.J$_{c}$ for out-of-phase. The present results were in good agreement with the equation of propagation law for isothermal low-cycle fatigue crack in case of thermo-mechanical fatigue.tigue.e.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1568-1570
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• 2003

We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.12
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• pp.70-77
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• 1996

Fatigue tests were carried out at high temperature on a Cr-Mo-V steel in order to assess the fatigue life of components used in power plants. The characteristics of high temperature fatigue were divided in terms of cycle-dependent fatigue and time-dependent fatigue, each crack propagation rate was examined with respect to fatigue J-integral range, .DELTA. J$_{f}$and creep J-integral range, .DELTA. J$_{c}$. The fatigue life was evaluated by analysis of J-integral value at the crack tip with a dimensional finite element method. The results obtained from the present study are summarized as follows : The propagation characteristics of high temperature fatigue cracks are determined by .DELTA. J$_{f}$for the PP(tensile plasticity-compressive plasticity deformation) and PC(tensile plasticity - compressive creep deformation) stress waveform types, and by .DELTA. J$_{c}$for the CP(tensile creep- compressive plasticity deformation) stress waveform type. The crack propagation law of high temperature fatigue is obtained by analysis of J-integral value at the crack tip using the finite element method and applied to examine crack propagation behavior. The fatigue life is evaluated using the results of analysis by the finite element method. The predicted life and the actual life are close, within a factor of 2.f 2.f 2.

• Proceedings of the KIEE Conference
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• 1995.07b
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• pp.613-615
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• 1995

KEPCO is now going on upgrading the highest system voltage from 345kV to 765kV since 1992. The main reason of this 765kV project is the bulk power transmission from the power generation sites at the East and West coasts to the Kyeong-in area. The first 765kV transmission lines will be constructed by 1998 and operated as 345kV level until 2001. This system needs a detailed evaluation of the 2nd arc in case of 765kV transmission line outages and the countermeasures for the fast arc reduction for the successful high speed reclosing. So, this paper deals with the simulation results of the 2nd arc characteristics using EMTP and comparison of Sh.R and HSGS for the reduction methods.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.276-278
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• 1996

The breakdown Process in large gaps is greatly influenced by the gap geometry. Therefor full scale test are essential for the economical and reliable air insulation design. For switching surge design of 765 kV double circuit transmission line KEPRI is carrying the verifying tests using impulse voltage generator at Gochang test site. In this paper, the intermediate results of verifying tests are presented and the switching surge design criteria of 765 kV transmission tower flashover paths are discussed.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1853-1855
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• 2000

An experimental investigation has been performed in order to understand the $\Phi$-q-n characteristics related to the PD taking place from the various size of artificial defects inserted in epoxy insulation. In this purpose, PD has been detected simultaneously by two different methods such as commercialized PD detector(TE571) and our detection system using self designed CT type sensor. Under the presence of void in epoxy insulation, PD has been initiated at the voltages between 16kV and 20kV which are much lower than the dielectric strength of epoxy insulation (130kV/mm$\sim$l50kV/mm). And also it is revealed that $\Phi$-q-n characteristics have been observed to be dependent upon the size of the artificial defects. Throughout this work, the on site applicability of the self designed Sensor has also been proved by comparing the results with those from the commercialized PD detector. And more one, considerable basic data regarding the insulation, diagnosis could be provided to understand the presence of the voids possibly inserted into the epoxy insulation system of the power apparatus.