Progress in Superconductivity and Cryogenics (한국초전도ㆍ저온공학회논문지)

The Korean Society of Superconductivity and Cryogenics (한국초전도저온학회)
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Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$

$28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성

  • Published : 2002.05.01
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Abstract

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

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References

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