• Laser Solutions
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• v.8 no.3
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• Nuclear Engineering and Technology
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• v.52 no.2
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• pp.456-460
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• 2020

In this research, a radiation detection backpack to be used discreetly or by a wide range of users was developed using array silicon-photomultiplier (SiPM) and CsI (Tl), and its characteristics were evaluated. The R-squared value, which indicates the responsiveness of a detector based on the signal intensity, was determined to be 0.981, indicating a good linear responsivity. The energy resolutions for gamma radiation energies of Co-57 (122 keV), Ba-133 (356 keV), Cs-137 (662 keV), and Co-60 (1332 keV) were found to be 13.40, 10.50, 6.77, and 3.16%, respectively. These results confirm good energy resolution characteristics. Furthermore, in the case of mixed sources, the gamma radiation peaks were readily distinguishable, and the R-squared value for energy linearity was calculated to be 0.999, demonstrating an exceptional energy linearity. Further research based on the results of this study would enable the commercialization of lightweight SiPM-based wireless radiation detection backpacks that can be used for longer durations by replacing the photomultiplier tube, which is mainly used as the optical sensor in existing radiation detection backpacks.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• Current Photovoltaic Research
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• v.7 no.3
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• pp.61-64
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• 2019

In this study, we investigate organic-inorganic hybrid solar cells with a very simple three-layer structure (Al/n-Si/PEDOT:PSS). The performance of hybrid solar cells is optimized by controlling the sheet resistance and optical transmittance of the PEDOT:PSS layers. As the thickness of the PEDOT:PSS layer decreases, the optical absorption of the n-Si increases, which greatly improves the short-circuit current density ($J_{SC}$) of devices, but the increase in sheet resistance leads to a decrease in the open-circuit voltage ($V_{OC}$) and the fill factor (FF). The solar cell with the 180-nm thick PEDOT:PSS layer shows a highest efficiency of 8.45% ($V_{OC}$: 0.435 V, $J_{SC}$: $33.7mA/cm^2$, FF: 57.5%). Considering these results, it is expected that the optimizing process for the sheet resistance and transmittance of the PEDOT:PSS layer is essential for producing high-efficiency organic-inorganic hybrid solar cells and will serve as an important basis for achieving low-cost, high-efficiency solar cells.

• Journal of Sensor Science and Technology
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• v.25 no.6
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• pp.440-446
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• 2016

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.65-68
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• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of ITO/PEDOT:PSS/CuPc/$C_{60}$/BCP/Al. The PEDOT:PSS layer is made by spin coating. and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light. we have obtained a value of $V_{oc}$=0.358V and $J_{sc}$=0.338mA/$cm^2$. A fill factor and efficiency are about 0.271 and 0.033%, respectively. A 500W xenon lamp(ORIEL) was used for a light source, and the light intensity illuminated into the device was about 10mW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.506-509
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• 2003

In this paper, the $\Phi$-q-n pattern and average discharge power of silicone rubber have investigated effect of inter impurities. It's changed impurities by silicone oil, water and copper. Applied voltage is AC 3, 4, 4.5, 5, 5.5[kV]. And data acquisition time is 10 second(600 cycles). These results suggest that partial discharge(PD) is shower negative polar than positive polar at 3[kV]. Positive polar's PD value increased with increase of applied voltage. The Conductivities expressed same $\Phi$-q-n pattern in positive polar and negative polar at phase region.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1603-1605
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• 1994

Recently, Gas Circuit Breakers are rapidly replacing Vacuum Circuit Breakers in the medium voltage switchgear. This is due to the improved performance of - GCB in interrupting capability, price, weight, size etc., while the countermeasure to suppress the switching surges of VCB has not been satisfactory. Intensive research works on the GCB have been conducted in the world widely since 1980. Nowadays it is well known that the thermal expansion type GCB can provide- better performance than puffer type in the distribution power system. KERI has conducted researches in the GCB rated at 25.8kV 25kA with Jinkwang Co. using the thermal expantion principle since 1993. In this paper, the calculated results of electric and magnetic fields for the model GCB are presented and analyzed. The effect of permanent magnet used to improve the interruption capabilty at the low current level is also investigated. The design parameters for the interrupter inspected through the short-circuit tests conducted at high power laboratory of KERI.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.36-43
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• 1997

FECAPS(ferroelectric capacitors) have been fabricated by RF magnetron sputtering deposition of 3000$\AA$ PZT thin films on the Pt/Ti/$SiO_2$/Si substrates and post-annealing with the temperature of $550^{\circ}C$~$650^{\circ}C$ for 10 sec~50 sec in a RTA system. The electrical characteristics of the fabricated capacitors showed the highest dielectric constant and remanent polarization[${\varepsilon_r(1kHz)$=690, $2P_r$(-5V~5V sweep)=22$\mu$C/$ \textrm{cm}^2$] in the samples annealed at $650^{\circ}C$ for 30 sec, while the lowest tangent loss and leakage current [$tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$]in the samples annealed at $600^{\circ}C$ for 30 sec.