• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1281-1282
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

• 대한수학회논문집
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• 제9권3호
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• pp.731-737
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• 1994

Let $(\Omega, F, P)$ be a probability space with F a $\sigma$-algebra of subsets of the measure space $\Omega$ and P a probability measures on $\Omega$. Suppose $a > 0$ and let $(F_t)_{t \in [0,a]}$ be an increasing family of sub-$\sigma$- algebras of F. If $r > 0$, let $J = [-r, 0]$ and $C(J, R^n)$ the Banach space of all continuous paths $\gamma : J \to R^n$ with the sup-norm $\Vert \gamma \Vert_C = sup_{s \in J} $\mid$\gamma(x)$\mid$$ where $$\mid$\cdot$\mid$$ denotes the Euclidean norm on $R^n$. Let E and F be separable real Banach spaces and L(E,F) be the Banach space of all continuous linear maps $T : E \to F$ with the norm $\Vert T \Vert = sup {$\mid$T(x)$\mid$_F : x \in E, $\mid$x$\mid$_E \leq 1}$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.741-744
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• 2007

The research applied the processes of spin-coating and thermal-evaporating in proper order to deposit the hole transport material N,N'-Bis(naphthalen-1-yl)- N,N'-bis(phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer.

• 한국응용과학기술학회지
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• 제34권2호
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• pp.376-381
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• 2017

지방산 혼합물 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. 지방산혼합물 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 0.01N $KClO_4$ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 지방산혼합물 LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역 공정으로 나타났다. 지방산혼합물 LB막은 전해질농도가 0.01 N $NaClO_4$ 용액에서 확산계수(D)는 각각 $7.9{\times}10^{-2}cm^2s^{-1}$을 얻었다.

• Macromolecular Research
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• 제17권5호
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• pp.319-324
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• 2009

A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

• 전기화학회지
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• 제10권2호
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• pp.126-131
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• 2007

[ $Li_+$ ]를 기반으로 하는 비수용액 전해질에서 Prussian blue가 degradation이 없이 구동할 수 있도록 소재를 design하고 제조하여 전기화학적 변색특성을 연구하였다. Prussian blue는 ITO가 코팅되어 있는 유리판위에 일정전류-전착법으로 코팅을 했고, 이 때 사용된 코팅 용액은 $FeCl_3,\;K_3Fe(CN)_6$을 deionized water에 녹이고, HCl, KCl, LiCl을 각각 넣었다. 전기화학적 변색특성을 비교하기 위해 continuous와 pulse potential cycle 하는 동안 transmittance 변화를 in-situ He-Ne laser를 이용하여 측정하였고, electroactive layer thickness를 통해 degradation된 정도를 실험하였다.

• 한국응용과학기술학회지
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• 제31권3호
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• pp.352-358
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• 2014

포화지방산(C12, C14, C16, C18) 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. 포화지방산 단분자층 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 0.1 N $NaClO_4$ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 포화지방산 LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역공정으로 나타났다. 포화지방산 LB막의 확산계수(D)를 산출한 결과 각각 라우르산, $2.223{\times}10^{-3}cm^2/s$, 미리스트산, $2.461{\times}10^{-4}cm^2/s$, 팔미트산, $7.114{\times}10^{-4}cm^2/s$ 및 스테아르산, $2.371{\times}10^{-4}$을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.396-396
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• 2012

$TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.