• Journal of the Korean Chemical Society
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• v.33 no.3
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• pp.332-334
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• 1989

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.146-151
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• 1995

We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.

• Analytical Science and Technology
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• v.8 no.2
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• pp.139-159
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• 1995

Positive ion mass spectra of some corticosteroids were obtained by using liquid chromatography-mass spectrometry(LC-MS). The base peak of each compound showed the protonated molecular ion [$MH^+$], ammonium adduct ion [${MNH_4}^+$] or [$MH^+-60$] ion according to its chemical structure and other characteristic mass ions were [$MH^+-18$], [${MNH_4}^+-18$] and so on. Several rat urinary metabolites of methylprednisolone acetate after the oral administration were detected by the thermospray LC-MS. The identified major metabolites were 20-hydroxymethylprednisolone(20-HMP), methylprednisolone(MP) and methylprednisone(11-KMP), which were supposed to be formed by deacetylation at the position of C-21, reduction at C-20, oxidation at C-11, or due to the bond cleavage between C-17 and C-20.

• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.92-97
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• 2011

In this study we have investigated the Li-ion coordination, thermal behavior and electrochemical stability of N-butyl-N-methyl-pyrrolidinium bis(trifluoromethanesulfonyl)imide ($Py_{14}TFSI$) with lithium bis(trifluoromethanesulfony)imide (LiTFSI) doping intended for use as electrolytes for lithium batteries. The ionic conductivity is reduced and glass transition temperature ($T_g$) increases with LiTFSI doping concentration. Also, the electrochemical stability increases with LiTFSI doping. A high LiTFSI doping could enhance the electrochemical stability of electrolytes for lithium batteries, whereas the decrease in the ionic conductivity limits the capacity of the battery.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.20-24
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• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.159-159
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• 1994

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.180-186
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• 2018

We report the discovery of Li-rich $Li_{1+x}[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y]O_2$ as a cathode material for rechargeable lithium-ion batteries in which a small amount of tetravalent vanadium ($V^{4+}$) is selectively and completely incorporated into the manganese sites in the lattice structure. The unwanted oxidation of vanadium to form a $V_2O_5-like$ secondary phase during high-temperature crystallization is prevented by uniformly dispersing the vanadium ions in coprecipitated $[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y](OH)_2$ particles. Upon doping with $V^{4+}$ ions, the initial discharge capacity (>$275mA\;h\;g^{-1}$), capacity retention, and voltage decay characteristics of the Li-rich layered oxides are improved significantly in comparison with those of the conventional undoped counterpart.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.