• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.262-267
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• 2010

$LiNi_{1-x}Mg_xO_2$(x=0, 0.025, 0.05, 0.075, 0.1) samples were synthesized by the solid-state reaction method. The crystal structure was analyzed by X-ray powder diffraction and Rietveld refinement. $LiNi_{1-x}Mg_xO_2$samples give single phases of hexagonal layered structures with a space group of R-3m. The calculated cation-anion distances and angles from the Rietveld refinement were changed with Mg contents in $LiNi_{1-x}Mg_xO_2$. The thicknesses of $NiO_2$ slabs were increased and the distances between the $NiO_2$ slabs were decreased with the increase in Mg contents in the samples. The electrical conductivities of sintered $LiNi_{1-x}Mg_xO_2$ samples were around $10^{-2}$ S/cm at room temperature. The electrochemical performances of $LiNi_{1-x}Mg_xO_2$were evaluated by coin cell test. Compared to $LiNiO_2$, $LiNi_{0.95}Mg_{0.05}O_2$ exhibited improved high-rate capability and cyclability due to the well-ordered layered structure by doping of Mg ion.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.458-464
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• 2021

Tungsten disulfide (WS₂), a typical 2D layerd structure, has received much attention as a pseudocapacitive material because of its high theoretical specific capacity and excellent ion diffusion kinetics. However, WS₂ has critical limits such as poor long-term cycling stability owing to its large volume expansion during cycling and low electrical conductivity. Therefore, to increase the high-rate performance and cycling stability for pseudocapacitors, well-dispersed WS₂ nanoparticles embedded in carbon nanofibers (WS₂-CNFs), including mesopores and S-doping, are prepared by hydrothermal synthesis and sulfurizaiton. These unique nanocomposite electrodes exhibit a high specific capacity (159.6 F g^-1 at 10 mV s^-1), excellent high-rate performance (81.3 F g^-1 at 300 mV s^-1), and long-term cycling stability (55.9 % after 1,000 cycles at 100 mV s^-1). The increased specific capacity is attributed to well-dispersed WS₂ nanoparticles embedded in CNFs that the enlarge active area; the increased high-rate performance is contributed by reduced ion diffusion pathway due to mesoporous CNFs and improved electrical conductivity due to S-doped CNFs; the long-term cycling stability is attributed to the CNFs matrix including WS₂ nanoparticles, which effectively prevent large volume expansion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.533-540
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• 2024

In line with the development of electronic devices and technologies, the demand for improving ferroelectric materials' performance is increasing. Since K_0.5Na_0.5NbO₃ (KNN), an eco-friendly ferroelectric material that does not use lead and has a high Curie temperature, it is attracting attention to its usability as a high-temperature dielectric, and various studies are being conducted to increase performance. In a KNN having a perovskite structure, there was a simulation result that the KNN has higher spontaneous polarization when the A-site in which sodium ions exist is replaced with lithium ions. If the simulation results can be proven experimentally, the application range of KNN-based ferroelectric materials will increase. To this end, we tried to manufacture a K_1-xLi_xNbO₃ (KLN) with high electrical characteristics by fabricating niobium-deficient and potassium-excessive compositions, which attempt was made to solve the stoichiometry problem by volatilization and suppress secondary phases. If KLN's secondary phase suppression and relative permittivity improvement are successful, it will contribute to meeting the demand for developing electronic devices.

• Journal of the Korean Electrochemical Society
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• v.15 no.4
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• pp.230-235
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• 2012

Polymer electrolytes consisted of $BF_3LiMA$ and 300 (PEGMA300) or 1100 (PEGMA1100) g $mol^{-1}$ of PEGMA were prepared and the electrochemical properties were characterized. Interestingly, the AC-impedance measurement shows $1.22{\times}10^{-5}S\;cm^{-1}$ of room temperature ionic conductivity from PEGMA1100 based solid polymer electrolytes while $8.54{\times}10^{-7}S\;cm^{-1}$ was observed in PEGMA300 based liquid polymer electrolytes. The more suitable coordination between lithium ion and ethylene oxide (EO) unit might be the reason of higher ionic conductivity which can be possible in PEGMA1100 based electrolytes since it has 23 EO units in monomer. The lithium ion transference number was found to be 0.6 due to the side reactions between $BF_3$ and lithium metal expecially for longer time but 0.9 was observed within 3000 seconds of measuring time which is strong evidence of a single-ion conductor.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.331-334
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• 1998

p형 실리콘 기판위에 100.angs.의 초기 산화막을 성장시킨 후 붕소(B)와 인(P)을 1MeV 이온주입 에너지로 4.dec. tilting하여 붕소의 도즈량은 1*10/녀ㅔ 13/[cm/sup -2/]까지, 인은 1*10/sup 13/[cm/sup -2]로부터 1*10/sup 14/[cm/sup -2/] 까지 변화시키며 이온 주입하였다. 이온주입 후 RTA 로서 열처리 하였으며, 열처리 시간은 10초에서 40초까지,열처리 온도를 1000.deg.C에서 1100.deg.C까지 변화하였다. 이후 기파낸의 불순물의 프로파일 및 미세 결함의 분포를 분석하기 위하여, SIMS, SRP, XTEM 분석을 실시하였고, 이를 monte-carlo 모ㅓ델로서 시뮬레이션하여 비교하였다. SIMS 분석 결과 열처리 온도와 시간이 증가할수록 접합깊이가 증가하였고, 프로파일이 넓어짐을 볼수 있다. SRP 측정에서 붕소는 주해거리 (Rp)값은 1.8.mu.m~1.9.mu.m, 인의 경우는 1.1.mu.m~1.2.mu.m의 주행거리 (Rp) 값이 나타났다. XTEM 분석결과 붕소의 경우 열처리에 전후에도 결함을 볼수 없었고, 인의 경우 열처리 이후에 실리콘 결정내부에 있던 산소(O)와 인(P)우너자의 pinning효과에 의해 전위다이폴을 형성하여 표면근처로 성장함을 볼수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.