• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.292-300
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• 1996

The scattering of incident ions and target atoms in the amorphous solid matters are calculated by Monte Carlo simulation method. The experimentally derived universal scattering cross-section of Kalbitzer and Oetzmann is used to describe nuclear scattering. For electronic energy loss, the Lindhard-Scharff and Bethe formula are used. Comparing the ion scattering formulas and ranges with the known results of experiment and other programs, we find our results are good agreement with others.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.64-64
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• 2010

Ice film surfaces were examined by using the reactive ion scattering (RIS) of low energy (<35 eV) cesium ion beams. Neutral molecules (X) on the surface were detected in the form of cesium-molecule ion clusters (CsX+). Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process below the threshold energy of secondary ion emission. The RIS and LES methods allowed us to study the H/D exchange reactions between H2O and D2O molecules on the surface and the associated proton transfer mechanisms. Specifically, H/D exchange kinetics was examined for D2O ice films (~10 BL) covered with a small amount of H2O (<0.5 BL), in the presence or absence of HCl adsorbates which provided excess protons on the surface.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.30-35
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• 2002

We show that a combined technique of Cs$^{+}$ reactive ion scattering (Cs$^{+}$ RIS) and low-energy secondary ion mass spectrometry (LESIMS) provides a powerful means for probing molecular films and their surface reactions. Simple molecules, including HCI, NH$_3$, D$_2$O, and their mixtures, were deposited into a thin film of several monolayer thickness on Ru(001) at low temperature in vacuum, and the surface was characterized by Cs$^{+}$ RIS and LESIMS. On pure films, D$_2$O, HCI, and NH$_3$ existed in the corresponding molecular states. When HCI and NH$_3$ were co-deposited, ammonium ion(NH$_4$$^{+}$) was readily formed by proton transfer from HCI to NH$_3$. In the presence of water molecules, HCI ionized first to hydronium ion(H$_3$O$^{+}$), which subsequently transferred proton to NH$_3$ to form NH$_4$$^{+}$. The proton transfer, however, did not occur to a completion on ice, in contrast to the complete reaction in aqueous solutions.s solutions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.471-478
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• 2002

Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.107.1-107.1
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• 2014

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.765-769
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• 2003

Time-Of-flight Impact-Collision Ion Scattering Spectroscopy (TOF-ICISS) using 2 keV He$\^$+/ ion was applied to study the geometrical structure of the Si(100) surface. The scattered ion intensity was measured along the [011] azimuth varying the incident angle. The focusing effects were appeared at the incident angles of 20$^{\circ}$, 28$^{\circ}$, 46$^{\circ}$, 63$^{\circ}$, and 80$^{\circ}$. The Si atomic position was simulated by calculating the shadow cone to explain the five focusing effects. The four focusing effects at 28$^{\circ}$, 46$^{\circ}$, 63$^{\circ}$, and 80$^{\circ}$ resulted from the {011} surface where no dimers existed on the outermost surface. On the contrary, the scattering between two Si atoms in a dimer resulted in the focusing peak at 20$^{\circ}$.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.80-84
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• 2012

A high reflectance mirror, which has very low absorption and scattering loss, was coated onto a crystalline substrate by ion beam sputtering and then annealed at $450^{\circ}C$. We carefully selected the mirror coating material, and designed the high reflectance mirror, in order to avoid UV degradation which comes from the He-Ne plasma. We measured the surface roughness of the Zerodur substrate using phase shift interferometry and atomic force microscopy, and compared it with the TIS scattering of the mirror. The cavity ring-down method was used to measure the absorption of the mirror, and the thin film structure was correlated to its results. We also compared the optical properties of coated mirrors before and after annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.139-140
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.187-188
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• 2007

Four kinds of mirror substrates with same surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering technique. Most of the fused silica mirrors showed lower scattering than the ZERODUR mirrors one, which deposited on substrates similar in surface roughness. The ZERODUR mirrors scattering strongly depend on the micro-structure of $Ta_2O_5/SiO_2$ thin films wear deposited on ZERODUR substrates.