Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Argon and Nitrogen Implantation Effects on the Structural and Optical Properties of Vacuum Evaporated Cadmium Sulphide Thin Films

CdS 박막의 구조적 및 광학적 물성에 미치는 아르곤 및 질소 이온 주입 효과

  • ;
  • ;
  • D. Mangalaraj
  • 이준신 (성균관대학교 정보통신공학부) ;
  • 이재형 (성균관대학교 정보통신공학부) ;
  • Published : 2002.06.01
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Abstract

Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

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References

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