• Journal of IKEEE
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• v.23 no.3
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• pp.904-909
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• 2019

Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.130-133
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• 2010

Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.699-702
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• 1997

The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.150.2-150.2
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• 2017

This research was conducted to investigate in detail the effect of $PO_4{^{3-}}$, $CO_3{^{2-}}$ and $F^-$ anions on the electrochemical properties of the thin air-formed oxide film-covered AZ31 Mg alloy. In this work, native air-formed oxide films on AZ31 Mg alloy samples were prepared by knife-abrading method and the changes in the electrochemical properties of the air-formed oxide film were investigated in electrolytes containing 0.01 M, 0.05 M and 0.1 M of $PO_4{^{3-}}$, $CO_3{^{2-}}$ and $F^-$ anions. It was observed that the trend of open circuit potential (OCP) transients changed only in the solution containing $PO_4{^{3-}}$ ions. The Nyquist plots obtained from electrochemical impedance spectroscopy (EIS) showed that the resistance of the new surface films formed in fluoride ion containing bath increased with the increase in concentration of fluoride ions but the resistance of surface films formed in carbonate ion containing bath decreased with the increase in concentration of carbonate ions. The potentiodynamic polarization curves illustrated that under anodic polarization, there was growth of porous passive layer only in fluoride ion containing solution while the surface layer formed in phosphate and carbonate ion containing solutions lost its passivity at high anodic potential of $2.5V_{Ag/AgCl}$.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.327-332
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• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.376-380
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• 2016

A composite electrode made of iron oxide nanoparticles/multi-wall carbon nanotube (iNPs/M) delivers high specific capacity and cycle durability. At a rate of $200mAg^{-1}$, the electrode shows a high discharge capacity of ${\sim}664mAhg^{-1}$ after 100 cycles, which is ~ 70% of the theoretical capacity of $Fe_3O_4$. Carbon black, carbon nanotube, and graphene as anode materials have been explored to improve the electrical conductivity and cycle stability in Li ion batteries. Herein, iron oxide nanoparticles on acid treated MWCNTs as a conductive platform are combined to enhance the drawbacks of $Fe_3O_4$ such as low electrical conductivity and volume expansion during the alloying/dealloying process. Enhanced performance was achieved due to a synergistic effect between electrically 3D networks of conductive MWCNTs and the high Li ion storage ability of $Fe_3O_4$ nanoparticles (iNPs).

• Smart Structures and Systems
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• v.25 no.3
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• pp.337-343
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• 2020

In this paper, we focused on the self-healing concrete using new nano-capsules. Three types of nano-capsules with respect to availability, high strength and temperature tolerance are used; type 1 is URF and polyethylene (PE) as shell and nano titanium oxide (TiO₂) as core, type 2 is URF and PE as shell and nano silica oxide (SiO₂) as core, type 3 is PE as shell and nano silica oxide (SiO₂) as core. The concrete samples mixed by nano-capsules with three percents of 0.5, 1 and 1.5. Based on experimental tests and the compressive strength of samples, the URF-PE-SiO₂ is selected for additional tests of compressive strength before and after recovery, ultrasonic test, ion chlorine and water penetration depths. After careful investigation, it is concluded that the optimum value of URF-PE-SiO₂ nano-capsules is 0.5% since leads to higher compressive strength, ultrasonic test, ion chlorine and water penetration depths.

• Membrane Journal
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• v.32 no.1
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• pp.1-12
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• 2022

Graphene oxide (GO) has been considered as a promising membrane material, because of its easy processability and distinct properties, including controllable pore size distribution and diffusion channels. Particularly, the feasibility has been proposed a number of simulation results and proof-of-concept experimental approaches towards GO membranes. That is, GO already shows many outstanding intrinsic properties suitable for promising membrane platforms, such as the minimum membrane thickness and the ability to generate nanopores in the two-dimensional lattices or to create slit-like nanochannels between adjacent sheets. This review will be addressed the important experimental development in GO-based membranes for gas and ion separations, emphasizing on intrinsic transport phenomena, and critical issues for practical applications.