• Bulletin of the Korean Chemical Society
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• 제30권11호
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• pp.2661-2664
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• 2009

Photodissociation of nitrous oxide near 203 nm has been studied by a combination of high resolution slice ion imaging technique and (2+1) resonance-enhanced multiphoton ionization (REMPI) spectroscopy of $N_2(X^1{{\Sigma}_g}^+)$ via the (a″$^1{{\Sigma}_g}^+$) state. We have measured the recoil velocity and angular distributions of $N_2$ fragments by ion images of the state-resolved photofragments. The $N_2$ fragments were highly rotationally excited and the NN-O bond dissociation energy was determined to be 3.635 eV. Also, we investigated the photofragment images from the photodissociation of $N_2O$ clusters with various stagnation pressures.

• Nuclear Engineering and Technology
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• 제55권10호
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• pp.3659-3664
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• 2023

The electrochemical behavior of dissolved hydrogen (H₂) was investigated at a Pt electrode in a high temperature LiOH-H₃BO₃ solution. The diffusion current of the H₂ oxidation was proportional to the concentration of the dissolved H₂ as well as the reciprocal of the temperature. In the polarization curve, a potential region in which the oxidation current decreases despite an increase in the applied potential between the H₂ oxidation and the water oxidation regions was observed. This potential region was interpreted as being caused by the formation of a Pt oxide layer. Using the properties of the Cl^- ion that reduces the growth rate of the Pt oxide layer, it was confirmed that there is a correlation between the Cl^- ion concentration and the transient current of the H₂ oxidation.

• 한국진공학회지
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• 제5권1호
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• pp.6-13
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• 1996

The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around l00F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.319-323
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• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, e have studied on pretretmetn of electrode to contain working ions easily. We'll report more details.

• 전기화학회지
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• 제18권4호
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• pp.161-171
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• 2015

수열합성법을 이용하여 $Zn_2GeO_4$ 및 $Zn_2SnO_4$ 나노선을 대량 합성하였고 리튬이온 전지와 소듐이온전지의 전기화학적 특성을 조사하였다. 리튬이온전지에서 $Zn_2GeO_4$ 나노선은 50 사이클 이후에 1021 mAh/g, $Zn_2SnO_4$ 나노선은 692 mAh/g의 높은 방전용량을 갖는 것을 확인하였고 두 나노선 모두 98%가 넘는 쿨롱 효율을 보였다. 따라서 이들 나노선은 고성능 리튬이온전지의 개발을 위한 음극소재로 기대된다. 또한 소듐이온전지에 대한 관심이 국내는 물론 전 세계적으로 집중이 되고 있어 처음으로 $Zn_2GeO_4$과 $Zn_2SnO_4$ 나노선에 대한 소듐이온전지를 제작하여 용량을 측정하였다. 측정한 결과 이들 나노선은 50 사이클 이후에 각각 168 mAh/g 과 200 mAh/g의 방전용량을 갖는 것을 확인하였고 두 나노선 모두 97%가 넘는 높은 쿨롱 효율을 보였으며 이에 우리의 첫 시도가 앞으로 많은 연구에 기여할 것으로 예상한다.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• 폴리머
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• 제27권4호
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• pp.385-391
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• 2003

본 연구에서는 에틸렌 옥사이드의 반복 단위 길이 (n＝3, 7.3, 11.8, 그리고 16.3)가 다른 리튬 p-［메톡시 올리고(에틸렌옥시)］벤젠설폰산염 (LiEOnBS)을 합성하였다. 이 전해질 염을 이용하여 고분자 전해질을 제조하였으며, 에틸렌 옥사이드의 반복 단위 길이 및 농도에 따른 이온 전도도 그리고 리튬 이온의 운반율에 대해 조사하였다. 고분자 전해질의 이온 전도도는 3$0^{\circ}C$에서 4.89$\times$$10^{-4}$ S/cm (LiEO7.3BS, 0.5 M)로 최고 이온 전도도를 보였다. Dc분극과 ac 임피던스를 혼합하여 측정한 고분자 전해질의 리튬 이온의 운반율은 0.75~0.92 이였으며, 농도가 증가할수록 리튬 이온 운반율은 감소하였다. LiEO7.3BS의 전해질 염을 0.1 M로 사용한 고분자 전해질인 경우 0.92로 최고의 리튬 이온 운반율을 보였다. 이로부터 벤젠설포네이트에 치환된 에틸렌 옥사이드의 반복 단위가 3이상만 되어도 높은 리튬 이온 운반율을 가지는 단일 이온 전해질 특성을 보임을 알 수 있었다.