• Title/Summary/Keyword: Ion current

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Continuous ion-exchange membrane electrodialysis of mother liquid discharged from a salt-manufacturing plant and transport of Cl- ions and SO42- ions

  • Tanaka, Yoshinobu;Uchino, Hazime;Murakami, Masayoshi
    • Membrane and Water Treatment
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    • v.3 no.1
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    • pp.63-76
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    • 2012
  • Mother liquid discharged from a salt-manufacturing plant was electrodialyzed at 25 and $40^{\circ}C$ in a continuous process integrated with $SO_4{^{2-}}$ ion low-permeable anion-exchange membranes to remove $Na_2SO_4$ and recover NaCl in the mother liquid. Performance of electrodialysis was evaluated by measuring ion concentration in a concentrated solution, permselectivity coefficient of $SO_4{^{2-}}$ ions against $Cl^-$ ions, current efficiency, cell voltage, energy consumption to obtain one ton of NaCl and membrane pair characteristics. The permselectivity coefficient of $SO_4{^{2-}}$ ions against $Cl^-$ ions was low enough particularly at $40^{\circ}C$ and $SO_4{^{2-}}$ transport across anion-exchange membranes was prevented successfully. Applying the overall mass transport equation, $Cl^-$ ion and $SO_4{^{2-}}$ ion transport across anion-exchange membranes is evaluated. $SO_4{^{2-}}$ ion transport number is decreased due to the decrease of electro-migration of $SO_4{^{2-}}$ ions across the anion-exchange membranes. $SO_4{^{2-}}$ ion concentration in desalting cells becomes higher than that in concentration cells and $SO_4{^{2-}}$ ion diffusion is accelerated across the anion-exchange membranes from desalting cells toward concentrating cells.

Hot Electron Emission Test of an Ion Source for a Micro Mass Spectrometer (초소형 질량 분석기를 위한 이온 발생기의 열전자 방출 시험)

  • Yoon, Hyeun-Joong;Kim, Jung-Hoon;Park, Tae-Gyu;Yang, Sang-Sik;Jung, Kwang-Woo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.8
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    • pp.419-422
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    • 2001
  • This paper presents the principle and fabrication of a novel micro mass spectrometer and emission test of hot electron for ionization. A micro mass spectrometer consists of a micro ion source and a micro ion separator. The micro ion source consists of a hot filament and grid electrodes. Electrons emitted from a hot filament are to ionize some sample molecules. The ions are accelerated to an ion detector by an electric field. Mass can be analyzed by using the time of fight depending on the mass-to-charge ratio. The current of hot electron emission from the hot filament is measured for various input voltages.

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Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication (이온빔을 이용한 마이크로/나노 가공: 형상가공)

  • Kim, Heung-Bae;Hobler, Gerhard
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.10
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    • pp.109-116
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    • 2007
  • Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

Modelling on Sheath Expansion of Two-dimensional Grid Electrodes

  • Yi, Changho;Namkung, Won;Cho, Moohyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.243.1-243.1
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    • 2014
  • For two-dimensional grid electrodes immersed in plasmas, sheath expansion due to negative high-voltage pulse applied to the electrode generates high-energy pseudowave. The high-energy pseudowave can be used as ion beam for ion implantation. To estimate ion dose due to high-energy pseudowave, investigation on sheath expansion of grid electroes is necessary. To investigate sheath expansion, an analytic model was developed by Vlasov equation and applying the 1-D sheath expansion model to 2-D. Because of lack of generalized 2-D Child-Langmuir current, model cannot give solvable equation. Instead, for a given grid electrode geometry, the model found the relations between ion distribution functions, Child-Langmuir currents, and sheath expansions. With these relations and particle-in-cell (PIC) simulations, for given grid electrode geometry, computation time was greatly reduced for various conditions such as electrode voltages, plasma densities, and ion species. The model was examined by PIC simulations and experiments, and they well agreed.

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Development of a High Brightness Ion Beam Extraction System using Micro-size Aperture (마이크로 사이즈 인출구경을 이용한 고휘도 이온빔 인출 시스템 개발)

  • Kim Yoon-Jae;Park Dong-Hee;Jeong Hyeong-Seol;Hwang Yong-Seok
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2005.05a
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    • pp.19-23
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    • 2005
  • In order to develop a high brightness ion source using plasma, the ion beam extraction system with an aperture of $100{\mu}m$ in diameter has been designed and constructed. It is observed that over 500nA of He ion beam current can be extracted. With such an optimized condition, $\~10^3\;A/cm^2sr$ beam brightness can be measured by emittance scanner, which is believed to be a promising result for developing next generation FIB.

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A study on the development of liquefied natural gas-fired combustor (액화천연가스 연소기개발에 관한 연구)

  • 최병륜;오상헌;김덕줄
    • Journal of Advanced Marine Engineering and Technology
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    • v.10 no.3
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    • pp.107-118
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    • 1986
  • The presenet research attempts to examine the combustion characteristics and the structure of the flame in turbulent premixed flames and thus enhance the combustion performance that leads to the design of the effective combustion system (untilizing LNG). Following experimental investigations for several stabilized premixed flames were attempted to identify the interactive mechanism between flame structures and flow fields; Visualization by Schlieren method, measurement of flow velocity by LDV, detection of ion current by ion probe, measurement of fluctuating temperature by thermocouple having compensation circuit, average values with respect to time of fluctuating amount for flow velocity, temperature, ion current, etc., variable RMS values, PDFs, autocorrelation, crosscorrelation, spatial macroscale, power spectra, and velocity scale. Continuing the authors published studies whose flame dominated by coherent structures and the characteristics of combustion reaction for irregular three dimensional flame and stabilized flame by step were investigated with obtained experimental quantities. Results of this research are following : The most turbulent flames support the structure of a Wrinkled laminar flame or laminar flamelets. It also observed that combustion reaction is related to small tubulence microscales of the turbulent flow fields closly.

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Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation (MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결합제어)

  • 정희석;고무순;김대영;류한권;노재상
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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Influence of Trap Passivation by Hydrogen on the Electrical Properties of Polysilicon-Based MSM Photodetector

  • Lee, Jae-Sung
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.316-319
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    • 2017
  • A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

Reactive Ion Etching Process Integration on Monocrystalline Silicon Solar Cell for Industrial Production

  • Yoo, Chang Youn;Meemongkolkiat, Vichai;Hong, Keunkee;Kim, Jisun;Lee, Eunjoo;Kim, Dong Seop
    • Current Photovoltaic Research
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    • v.5 no.4
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    • pp.105-108
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    • 2017
  • The reactive ion etching (RIE) technology which enables nano-texturatization of surface is applied on monocrystalline silicon solar cell. The additional RIE process on alkalized textured surface further improves the blue response and short circuit current. Such parameter is characterized by surface reflectance and quantum efficiency measurement. By varying the RIE process time and matching the subsequent processes, the absolute efficiency gain of 0.13% is achieved. However, the result indicates potential efficiency gain could be higher due to process integration. The critical etch process time is discussed which minimizes both front surface reflectance and etching damage, considering the challenges of required system throughput in industry.

Ion Gel Gate Dielectrics for Polymer Non-volatile Transistor Memories (이온젤 전해질 절연체 기반 고분자 비휘발성 메모리 트랜지스터)

  • Cho, Boeun;Kang, Moon Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.759-763
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    • 2016
  • We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.