• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.338-338
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• 2009

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, noncontact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. We investigated the high pretilt angle effects on electro-optical properties of ion beam (IB)-irradiated liquid crystal cells. on a blended polymer surface. High pretilt angle of liquid crystals IB-irradiated on a blended polymer surface including such as 5% and 10% of homeotropic polymer contents can' be achieved. The threshold voltages of IB-irradiated twisted nematic (TN) cells on a blended polymer surface decrease with increasing the pretilt angle. Also, the rising time of IB-irradiated TN cells decreases with increasing the pretilt angle. However the decay time of IB-irradiated TN cells increases with increasing the pretilt angle. Consequently, the electro-optical properties of IB-irradiated TN cells depend strongly on the pretilt angle in a blended polymer surface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.6-10
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• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.112-112
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.24-25
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• 1997

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.365-366
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.12 no.2
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• pp.14-22
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• 1995

We treat the vibrations of circular beam and make use of the method employed by J.T.Tielking, which is based on the principle of Hamilton. The Hamilton's principle requires the determinations of the potential and the kinetic energy of the model as well as done by internal pressure forces. Thje potential energy is composed of a part due to elastic deformations of the beam and a part due to radial and tangential displacements of the tread band with respect to the wheel rim. The equations of motion for such a model are derived by reference to conventional energy method. The accuracy of the expressions is demonstrated by comparison of calculated and experimental natural frequencies for circular beam. The circular beam experiences a harmonic, radial excitat- ion acting at a fixed point on the beam. Modal parameters varying the inflation pressure and load are determined experimentally by using the transfer function method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Applied Microscopy
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• v.47 no.2
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• pp.77-83
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• 2017

Drastic development of ubiquitous devices requires more advanced batteries with high specific capacitance and high rate capability. Large-area microstructure characterization across the stacks of cathode, electrolyte and anode might reveal the origin of the instability or degradation of batteries upon cycling charge. In this study, sample preparation methods to observe the cross-section view of the electrodes for battery in SEM and several imaging tips are reviewed. For an accurate evaluation of the microstructure, ion milling which flats the surface uniformly is recommended. Pros and cons of cross-section polishing (CP) with Ar ion and focused ion beam (FIB) with Ga ion were compared. Additionally, a modified but new cross-section milling technique utilizing precision ion polishing system (PIPS) which can be an alternative method of CP is developed. This simple approach will make the researchers have more chances to prepare decent large-area cross-section electrode for batteries.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.723-725
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• 2001

Ion plating method using plasma is faster as several times than electron beam plating method in plating process. Recently, a variety of techniques for this method are being researched. In this paper to produce sheet plasma with high density for ion plating we designed magnetic circuit of MgO plating device consisting of solenoid coil, rectangular permanent magnet. And, we researched on the effect of those by analyzing magnetic field distribution using FEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.1-290.1
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• 2016

Grapehen, a single atomic layer of graphite, has been in the spotlight and researched in vaious fields, because its fine mechanical, electrical properties, flexibility and transparence. Synthesis methods for large-area graphene such as chemical vaper deposition (CVD) and mechanical, chemical exfoliation have been reported. In particular, chemical exfoliation method receive attention due to low cost process. Chemical exfoliation method require reduction of graphene oxide in the process of exfoliation such as chemical reduction by strong reductant, thermal reduction on high temperature, and optical reduction via ultraviolet light exposure. Among these reduction methods, optical reduction is free from damage by strong reductant and high temperature. However, optical reduction is economically infeasible because the high cost of short-wavelength ultraviolet light sorce. In this paper, we make graphene-oxide and lanthanoid ion mixture aqueous solution which has highly optical absorbency in selective wevelength region. Sequentially, we synthesize reduced graphene oxide (RGO) using the solution and visible laser beam. Concretely, graphene oxide is made by modified hummer's method and mix with 1 ml each ultraviolet ray absorbent Gd3+ ion, Green laser absorbent Tb3+ ion, Red laser absorbent Eu3+ ion. After that, we revivify graphene oxide by laser exposure of 300 ~ 800 nm layser 1mW/cm2 +. We demonstrate reproducibility and repeatability of RGO through FT-IR, UV-VIS, Low temperature PL, SEM, XPS and electrical measurement.