• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.468-473
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• 1993

Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1 $\times$1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1 $\times$1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110$0^{\circ}C$ a few damage clusters still remained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1211-1213
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• 2004

In this paper, in other the study shift a degradation and electrical properties on ZnO based grain beurdry layer, we mearured thermally stmulated current. Also the TSC was investigated for understanding of GBL's interfacial carrier shift on bias voltage, bias time, bias temperature. as a result, the two peahs of $p_1$, $p_2$ was observed by conduction of the trapped carrier of border between the oxidation layer and the grains $P_3$ and $P_4$ Peaks observed to the ionization excition excitation in the grain.

• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.190.1-190.1
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• 2014

The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (EDHOMO - EALUMO) was determined and compared with that of C60/pentacene bilayers. The EDHOMO - EALUMO of a heterojunction with ClAlPc was found to be 1.4 eV, while that with C60 was 1.0 eV. This difference is discussed in terms of the difference of the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of ClAlPc/pentacene/ITO and C60/pentacene/ITO, respectively.

• Proceedings of the KWS Conference
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• 1996.05a
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• pp.6-9
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• 1996

The Joining of copper rod and zirconia tube was carried out in Ar gas atmosphere. There are two type of the joining. The one is the reaction bond consisting of Cu and zirconia was dominated by surface reaction wi th a undetctable very thin layer. It was found that copper elements were diffused to zirconia side, but that most of Z $r^{4+}$ ions were not diffused to copper side. This result means application of a DC voltage to migrate oxygen to the copper/zirconia interface can oxidize metal at the copper /zirconia interface, and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result means application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cr.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.63-63
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• 2011

In this tutorial session, the field of organic photovoltaic (OPV) cells based on small molecular weight materials will be presented. The previously reported studies on the fabrication, structure, and property of the cells as well as the molecular materials are included. Especially, the factors hampering further enhancement in the power conversion efficiency of the cells such as exciton recombination, light absorption and interfacial morphology between electron donor and acceptor layer will be discussed in detail. The recent progress in our group will also be presented. It includes typical materials and cell fabrication techniques we used as well as the studies on improving the light absorption in the electron donor layer and reducing the extinction of excitons formed by introducing the nanostructured interface between organic layers.