Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Annealing Behavior of Ar Implant Induced Damage in Si

Ar이 이온주입된 Si 기판의 결함회복 특성

  • 김광일 (산업과학기술연구소 전자전기연구분야) ;
  • 이상환 (한국전자통신연구소 반도체연구단) ;
  • 정욱진 (산업과학기술연구소 전자전기연구분야) ;
  • 배영호 (산업과학기술연구소 전자전기연구분야) ;
  • 권영규 (산업과학기술연구소 전자전기연구분야) ;
  • 김범만 (포항공과대학 전자전기공학과) ;
  • 삼야박 (경응의숙 이공학부전기공학과)
  • Published : 1993.12.01
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Abstract

Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1 $\times$1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1 $\times$1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110$0^{\circ}C$ a few damage clusters still remained.

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