• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1197-1201
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• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.230-233
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• 1996

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.225-228
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• 2009

We have demonstrated several effective intermediate connectors in tandem organic light-emitting devices (OLEDs) using doped or nondoped organic p-n heterojunction. The influence of n-type or p-type organic layer in intermediate connectors on device performance has been investigated based on the understanding of interfacial electronic structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.177-184
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• 1996

We adopted the $Pt/SiO_{2}/Si$ and the $Ir/SiO_{2}/Si$ substrates of which buffer layer is $PbTiO_{3}$ to improve electrode and interfacial properties of PZT thin film deposited by reactive sputtering method using metal target in this study. We got PZT thin film to have highly oriented(100) structure and good crystallinity using buffer layer in Pt bottom-electrode, though randomly oriented PZT thin film was obtained without buffer layer. Although great improvement of PZT phase formation on Ir bottom-electrode with buffer layer was not observed, we observed the increase of remennant polarization and the decrease of coercive field compared with properties of PZT thin films on the Pt bottom-electrode. So we got the results of the increase of dielectric constant using buffer layer on fabrication of PZT thin film and the better dielectric properties in PZT thin film using Ir bottom-electrode compared with that using Pt bottom-electrode.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.132-132
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• 2012

Depositing $CaF_2$[0.6% lattice-mismatch] on the Si(001)-$4^{\circ}$ off surface [composed of a single (001) domain with regularly-arrayed double-layer DB steps and located between (1 1 19) and (1 1 21)] held at $700^{\circ}C$, $CaF_2$ molecules are preferentially adsorbed on the dimers and dissociated to Ca and F atoms. Dissociated Ca atoms form a silicide layer of a $2{\times}3$ structure on the (001) terrace, while F atoms are desorbed from the surface. Once the terrace is covered with a calcium silicide layer, CaF starts to be adsorbed selectively on the steps, as shown in Fig. (a). With $CaF_2$ deposition exceeding 1 ML, the (1 1 17) surface having 1-D $CaF_2$ nanodots are formed as shown in Fig. (b). By the present STM study, it has been clearly disclosed that the calcium silicide interfacial layer is preformed prior to adsorption of $CaF_2$ on vicinal Si(001) surface.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.396-403
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• 1996

In this paper, the (S $r_{0.85}$.C $a_{0.15}$)Ti $O_{3}$ of paraelectric grain boundary layer (GBL) ceramics were fabricated, and the analysis of microstructuye and the thermally stimulated current(TSC) were investigated for understanding effects of GBL's interfacial phenomenon on variations of electrical properties. As a result, the three peaks of .alpha., .alpha. and .betha. were obtained at the temperature of -20 [.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20[.deg. C] appears to show up by detrap of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase. and second phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.53-59
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• 2003

Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

• Nuclear Engineering and Technology
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• v.47 no.3
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• pp.267-283
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• 2015

The main objective of this study is to investigate experimentally the two-phase flow characteristics in terms of the direct contact condensation of a steam-water stratified flow in a horizontal rectangular channel. Experiments were performed for both air-water and steam-water flows with a cocurrent flow configuration. This work presents the local temperature and velocity distributions in a water layer as well as the interfacial characteristics of both condensing and noncondensing fluid flows. The gas superficial velocity varied from 1.2 m/s to 2.0 m/s for air and from 1.2 m/s to 2.8 m/s for steam under a fixed inlet water superficial velocity of 0.025 m/s. Some advanced measurement methods have been applied to measure the local characteristics of the water layer thickness, temperature, and velocity fields in a horizontal stratified flow. The instantaneous velocity and temperature fields inside the water layer were measured using laser-induced fluorescence and particle image velocimetry, respectively. In addition, the water layer thickness was measured through an ultrasonic method.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.196-201
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• 2001

The dependence of CoFe interfacial layer thickness and plasma oxidation condition on tunneling magnetoresistance (TMR) in Ta/NiFe/FeMn/NiFe/Al$_2$O$_3$/NiFe/Ta tunnel junctions was investigated. As the CoFe layer thickness increases, TMR ratio rapidly increases to 13.7 % and decreases with further increase of the CoFe layer thickness. The increase of TMR with the CoFe thickness up to 25 was thought to be due mails to the high spin-polarization of CoFe. The maximum MR of 15.3% was obtained in the Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 ) magnetic tunnel junction with a 16 Al oxidized for 40 sec using a Ar/O$_2$ (1:4) mixture gas.