• Journal of the Korean Society for Heat Treatment
• /
• v.33 no.6
• /
• pp.284-289
• /
• 2020

Since the dissimilar bonded interface usually consists of intermetallic compounds (IMCs) layer and cracks, their mechanical and electrical properties can be influenced by microstructure at interface between two different metals. In this study, the friction welded Cu-Al busbar, which is widely used to connect a secondary battery and their component, is selected to analyze the influence of interfacial characteristic on their tensile strength and electric conductivity. Then, the electrical characteristics of Cu busbar and Cu-Al busbar were investigated by thermal flow analysis and temperature rise test. In addition, the relationship between the maximum saturation temperature and the electrical conductivity were discussed in terms of interfacial characteristics of the friction welded Cu-Al busbar.

• Journal of the Korean Electrochemical Society
• /
• v.11 no.3
• /
• pp.190-196
• /
• 2008

The multilayered membrane for lithium rechargeable batteries based on poly (vinylidene fluoride) (PVdF) is prepared with the coated layer containing nano-sized filler. The prepared membranes were subjected to studies of mechanical strength, morphology, interfacial stability, impedance spectroscopy, ionic conductivity, and cycle performance. The localized inorganic filler in the PVdF composite membrane rendered mechanical strength much reduced because of its low stretching ratio and it results in around half value of the mechanical strength of highly stretched PVdF membrane. In order to achieve high ionic conductivity and interfacial stability without sacrificing high mechanical strength, coating layer with nano-filler was newly introduced to PVdF membrane. The ionic conductivity of the coated membrane was 1.03 mS/cm, and the interface between the coating layer and PVdF membrane was stable when the membrane was immersed into liquid electrolyte. The discharge capacity of the cell based on nano-filler coated PVdF membrane was around 91% of the initial discharge capacity after 250 cycles, which is an improvement in cycle performance compared to the case for the non-coated PVdF membrane.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.619-619
• /
• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• Journal of Environmental Health Sciences
• /
• v.37 no.2
• /
• pp.141-149
• /
• 2011

This study aimed for developing a two stage dual media filtration system. It has a sand and activated carbon layer above the under-drain system, and a sand layer above the middle-drain system for pretreatment. When retrofitting an old sand filter bed or designing a new one, this technology can substitute the existing sand filter bed without requiring a new plant site. The removal rate of total particle is 93, and 3~7 ${\mu}m$ and 5~15 ${\mu}m$ particles are all 97%. These high removal efficiencies of each pollutant due to adsorption and biological oxidation in activated carbon filter layer. The best backwashing method of two stage dual media filtration system is ascertained by air injection, air + water injection and water injection sequence. In this study, a pilot plant of two stage and dual filtration system was operated for 4 months in water treatment plant. The stability of turbidity was maintained below 1 NTU. The TOC, THMFP and HAAFP were removed about 90% by two stage and dual media filtration system, which is almost 2 times higher than existing water treatment plant.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.131-145
• /
• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.61-61
• /
• 2000

Device의 고성능화를 위하여 소자의 고속화, 고집적화가 가속됨에 따라 SALICIDE Process가 더욱 절실하게 요구되고 있다. 이러한 SALICIDE Process의 재료로써는 metal/silicide 중에서 비저항이 가장 낮은 TiSi2(15-25$\mu$$\Omega$cm), CoSi2(17-25$\mu$$\Omega$cm)가 일반적으로 많이 연구되어 왔다. 그러나 Ti-silicide의 경우 Co-silicide는 배선 선폭의 감소에 따른 면저항 값의 변화가 작으며, 고온에서 안정하고, 도펀트 물질과 열역학적으로 안정하여 화합물을 형성하지 않는다는 장점이 있으마 Ti처럼 자연산화막을 제거할 수 없어 Si 기판위에 자연산화막이 존재시 균일한 실리사이드 박막을 형성할 수 없는 단점등을 가지고 있다. 본 연구에서는 Ti Capping layer 에 의한 균일한 Co-silicide의 형성을 일반적인 Si(100)기판과 SCl 방법에 의하여 chemical Oxide를 성장시킨 Si(100)기판의 경우에 대하여 연구하였다. 스퍼터링 방법에 의해 Co를 150 증착후 capping layer로써 TiN, Ti를 각각 100 씩 증착하였다. 열처리는 RTP를 이용하여 50$0^{\circ}C$~78$0^{\circ}C$까지 4$0^{\circ}C$ 구간으로 N2 분위기에서 30초 동안 열처리를 한후, selective metal strip XRD, TEM의 분석장비를 이용하여 관찰하였다. lst RTP후 selective metal strip 후 면저항의 측정과 XRD 분석결과 낮은 면저항을 갖는 CoSi2로의 상전이는 TiN capping과 Co 단일박막이 일반적인 Si(100)기판과 interfacial oxide가 존재하는 Si(100)기판위에서 Ti capping의 경우보다 낮은 온도에서 일어났다. 또한 CoSi에서 CoSi2으로 상전이는 일반적인 Si(100)기판위에서 보다 interfacial Oxide가 존재하는 Si(100)기판 위에 TiN capping과 Co 단일박막의 경우 열처리 후에도 Oxide가 존재하는 불균인한 CoSi2박막을 관찰하였으며, Ti capping의 경우 Oxise가 존재하지 않는 표면과 계면이 더 균일한 CoSi2 박막을 형성 할 수 있었다.

• Transactions of the Korean hydrogen and new energy society
• /
• v.23 no.5
• /
• pp.468-475
• /
• 2012

A proper stacking force and assembly are important to the performance of fuel cell. Improper assembly pressure may lead to leakage of fuels and high interfacial contact resistance, excessive assembly pressure may result in damage to the gas diffusion layer and other components. The pressure distribution of gas diffusion layer is important to make interfacial contact resistance less for stack performance. To analyze the influence of design parameter factors for pressure distribution, and to optimize stack design, DOE (Design of Experiment) was used for polymer electrolyte membrane fuel cell stack pressure test. As commonly known, the higher clamping force improves the fuel cell stack performance. However, non-uniformity of stress distribution is also increased. It shows that optimization between clamping force and stress distribution is needed for well designed structure of fuel cell stack. In this study, stack design optimization method is suggested by using FEM (Finite Element Methode) and DOE for light-weighted fuel cell stack.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.283.2-283.2
• /
• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Metals and Materials
• /
• v.47 no.3
• /
• pp.202-208
• /
• 2009

The effects of aging time on the microstructure and shear strength of the Low Temperature Co-fired Ceramic (LTCC)/Ag pad/Electroless Nickel Immersion Gold (ENIG)/BGA solder joints were investigated through isothermal aging at $150^{\circ}C$ for 1000 h with conventional Sn-37Pb and Sn-3Ag-0.5Cu. $Ni_3Sn_4$ intermetallic compound (IMC) layers was formed at the interface between Sn-37Pb solder and LTCC substrate as-reflowed state, while $(Ni,Cu)_3Sn_4$ IMC layer was formed between Sn-3Ag-0.5Cu solder and LTCC substrate. Additional $(Cu,Ni)_6Sn_5$ layer was found at the interface between the $(Ni,Cu)_3Sn_4$ layer and Sn-3Ag-0.5Cu solder after aging at $150^{\circ}C$ for 500 h. Thickness of the IMC layers increased and coarsened with increasing aging time. Shear strength of both solder joints increased with increasing aging time. Failure mode of BGA solder joints with LTCC substrate after shear testing revealed that shear strength of the joints depended on the adhesion between Ag metallization and LTCC. Fracture mechanism of Sn-37Pb solder joint was a mixture of ductile and pad lift, while that of Sn-3Ag-0.5Cu solder joint was a mixture of ductile and brittle $(Ni,Cu)_3Sn_4$ IMC fracture morphology. Failure mechanisms of LTCC/Ag pad/ENIG/BGA solder joints were also interpreted by finite element analyses.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.30 no.3A
• /
• pp.221-228
• /
• 2010

External bonding of carbon fiber reinforced polymer (CFRP) sheets has been widely accepted as a popular method for strengthening of deteriorated RC structures. The long-term behavior of CFRP-strengthened RC structure is often affected by that of the interface between CFRP sheets and concrete. This study aims at applying a viscoelastic model to describe the creep behaviour of the adhesive layer bonding CFRP sheet to concrete, the CFRP-concrete interface. Reviews of available models on concrete creep behavior have been first carried out and then new FE analysis model is proposed. The proposed FE analysis model based on the maxwell model has been verified by previous experimental results. It is shown that the creep effect of interfacial adhesive layer is very important on the long-term behavior of concrete structures strengthened with CFRP.