• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.91-96
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• 2017

In this computational study of optical fiber manufacturing, WOW (wet-on-wet) double coating process on freshly drawn glass fiber has been numerical modelled and simulated using a simplified geometry of typical optical fiber coating apparatus. The numerical domain includes primary and secondary coating dies along with secondary coating cup and the interface between primary and secondary coating liquids are investigated using level set method. Coating liquid viscosity is an important parameter and its dependence on temperature is also considered. Since there would be possibility for pressure and temperature of primary coating liquid to be increased substantially at high fiber drawing speed, the effects of increased pressure and temperature of primary coating liquid are examined on flow patterns of coating liquids in secondary coating cup. In case that both pressure and temperature of primary coating liquid are high enough, liquid interface becomes noticeably unstable and this flow instability could adversely affect the uniform coatings and final quality of produced optical fiber.

• 대한전자공학회논문지SD
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• 제48권9호
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• pp.13-21
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• 2011

본 논문에서는 MEMS 용량형 각속도 센서용 프로그래머블 CMOS 인터페이스 회로를 제작하고, 이를 MEMS 센싱 엘리먼트와 결합하여 평가하였다. 본 회로는 10 bit 프로그래머블 캐패시터 어레이 를 이용한 전하 증폭기, 오프셋 미세 조정을 위한 9 비트 DAC, 출력 민감도의 미세 조정을 위한 10 비트 PGA를 내장하여, 오프셋 및 민감도 오차를 정밀 조정할 수 있다. 제작 결과 자동 이득 제어 회로를 포함한 자가 발진 루프의 정상 동작을 확인하였다. 오프셋 오차와 민감도 오차는 각각 0.36%FSO 와 0.19%FSO 로 측정되었으며, 잡음 등가 해상도와 바이어스 불안정도는 각각 0.016 deg/sec 와 0.012 deg/sec 으로 평가되었다. 본 회로의 조정 기능을 이용하여 MEMS 용량형 각속도 센서의 기생 용량으로 인하여 발생되는 출력 오프셋 및 출력 민감도의 산포를 감소시킬 수 있으며, 이는 센서의 양산성 및 수율 향상에 크게 기여할 수 있을 것으로 기대된다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.187-196
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• 1997

Oxygen transfer in silicon melts during crystal growth under vertical magnetic fields is investigated numeriaclly and experimentally. A three-dimensional numerical simulation, including melt convection and oxygen transport, is carried out to understand how oxygen transfers in the melt under magnetic fields. Oxygen concentrations in single silicon crystals grown from the melt under these magnetic fields are experimentally measured by using an infrared absoption technique. The rusults obtained are compared to results from a numerical simualtion. An anomalous increase is observed in the oxygen concentration of the grown crystals under a magnetic field of about 0/03 tesla. The cause of this anomaly is identified as Benard instability, since the temperature at the bottom of the crucible is higher than that at interface. When the temperature at the bottom is decreased, the Benard cell can be removed, and a monotonical decrease in the oxygen concentration in the single crystals can be observed.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

• 대한전기학회논문지
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• 제35권10호
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• 한국분무공학회지
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• 제10권1호
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• pp.35-42
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• 2005

The present study has numerically and experimentally investigated the spray behavior of liquid jet injected in subsonic cross-flow. The corresponding spray characteristics are correlated with jet operating parameters. The spray dynamics are known to be distinctly different in the three regimes: the column, the ligament and the droplet regimes. The behaviors of column, penetration and breakup of liquid jet have been studied. Numerical and physical models are base on a modified KIVA code. The primary atomization is represented by a wave model base on the KH(Kelvin-Helmholtz) instability that is generated by a high interface relative velocity between the liquid and gas flows. In odor to capture the spray trajectory, CCD camera has been utilized. Numerical and experimental results indicate that the breakup point is delayed by increasing gas momentum ratio and the penetration decreases by increasing Weber number.

• 대한기계학회논문집
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• 제17권12호
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• pp.3028-3044
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• 1993

A metallic bond of great strength for the same or dissimilar metals can be produced by the explosive welding. The formation of a metallic jet at the interface between the two impacting plates has been simulated using the numerical hydrocode DYNA2D. The mechanism of explosive welding for the wave formation is also analyzed by the computer simulation technique. The microscopic with the experimentally observed behaviour of the explosive welding. The computer simulations of the explosive welding process have proven especially useful for analyzing the mechanism of metallic bones.