• ETRI Journal
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• v.36 no.2
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• pp.214-223
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• 2014

A fully-integrated penta-band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post-PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post-PA switches are integrated into a single IC using a $0.18{\mu}m$ silicon-on-insulator CMOS process, and a compact size of $5mm{\times}5mm$ is thus achieved. The fabricated W-CDMA PA module shows adjacent channel leakage ratios better than -39 dBc up to the rated linear power and power-added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single-band reference PA.

• The Transactions of the Korea Information Processing Society
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• v.3 no.4
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• pp.947-960
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• 1996

The primary goal for developing high performance ATM switching systems is to minimized the probability of cell loss, cell delay and deterioration of throughput. ATM switching element that is the most suitable for this purpose is the shared buffer memory switch executed by common random access memory and control logic. Since it is difficult to manufacture VLIS(Very Large Scale Integrated circuit) as the number of input ports increased, the used of switching module method the realizes 32$\times$32, 150 Mb/s switch utilizing 8$\times$8, 600Mb/s os 16$\times$16, 150Mb/s unit switch is latest ATM switching technology for small and large scale. In this paper, buffer capacity satisfying total-memory-reduction effect by buffer sharing in a shared buffer memory switch are analytically evalu ated and simulated by computer with cell loss level at traffic conditions, and also features of switching network utilizing the switching module methods in small and large-capacity ATM switching system is analized. Based on this results, the structure in outline of 32$\times$32(4.9Gb/s throughput), 150Mb/s switches under research in many countries is proposed, and eventually, switching-network structure for ATM switching system of small and large and capacity satisfying with above primary goals is suggested.

• Journal of Advanced Navigation Technology
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• v.8 no.1
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• pp.19-26
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• 2004

This paper deals with the automatic flight control system for an unmanned target drone which is operated by an army as an anti-air gun shooting training. By automation of unmanned target drone that is manually operated by external pilot, pilot can reduce workload and an army can reduce the budget. Most UAVs which are developed until today use high-cost sensors as AHRS and IMU to measure the attitude, but those are contradictory for the reduction of budget. This paper says the development of low-cost automatic flight control system which makes possible of automatic flight with low-cost sensors. We have developed the integrated automatic flight control system by integrating electricity module, switching module, monitoring module and RC receiver as an one module. We also prove the performance of automatic flight control system by flight test.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.10
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• pp.534-539
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• 2006

An integrated inductor using the low-temperature co-fired ceramics(LTCC) technology for low-power electronics was fabricated. In the inductor NiZn ferrite sheet$({\mu}_r=230)$, was embedded to increase inductance. The inductor has Ag spiral coil with 14 turns$(7turns{\times}2layers)$, a dimension of 0.6mm in width, 10um in thickness, and 0.15mm pitch. To evaluate the inductance, including the parasitic resistance, the fabricated inductor was calculated and measured. It was confirmed that calculated values were very close to the measured values. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC boost DC/DC converter with 1W output power and up to 0.5MHz switching frequency using the inductor fabricated was developed.

• Journal of KIISE:Computing Practices and Letters
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• v.6 no.4
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• pp.421-429
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• 2000

In present, ATM integrated switching system has been developed to a mixed modules that complexed switching system including maintenance, operation based on B-ISDN/LAN service and plug-in module, , which runs on workstation computer system. Meanwhile, workstation has HMI operation system feature including file system management, time management, graphic processing, TMN agent function. The workstation has communicated with between ATM switching module and clients. This computer system architecture has much burden messages communication among processes or processor. These messages communication consume system resources which are socket, message queue, IO device files, regular files, and so on. Therefore, in this paper we proposed new performance modeling with this system architecture. We will analyze the system bottleneck and improve system performance. In addition, in the future, the system has many additional features should be migrated to workstation system, we need previously to evaluate system bottleneck and redesign it. In performance model, we use queueing network model and the simulation package is used PDQ and C-program.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.3
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• pp.201-206
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• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.31-40
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• 2009

This paper presents a design of a high performance DC-DC boost converter as a power module for SOC designs. It applied to this chip that reduced inductor and capacitor for integrating on a chip, and it operates with a switching frequency of 100MHz. It has reliability and stability in high switching frequency. The controller of DC-DC boost converter is designed by voltage-mode control method and compensated properly. The designed DC-DC converter is fabricated with the 0.18${\mu}m$ standard CMOS technology with a thick-gate oxide option. The overall die size is 8.14$mm^2$, and controller size is 1.15$mm^2$. The converter has the maximum efficiency over 76% for the output voltage of 4V and load current larger 300mA. The load regulation is 0.012% (0.5mV) for the load current change of 100mA.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.105-111
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• 2004

This paper describes the design of navigation system for an unmanned target drone which is operated by Korean army as for anti-air gun shooting training. Current target drone is operated by pilot control of on-board servo motor via remote control system. Automatic flight control system for the target drone greatly reduces work load of ground pilot and can increase application area of the drone. Most UAVs being operated nowdays use high-priced sensors as AHRS and IMU to measure the attitude, but those are costly. This paper introduces the development of low-cost automatic flight control system with low-cost sensors. The integrated automatic flight control system has been developed by integrating combining power module, switching module, monitoring module and RC receiver as an one module. The performance of navigation for low cost unmanned aerial vehicle, unmanned target drone as our test bed in this paper is verified by both Hardware in the loop simulation(HILS) to test performance of GPS as GPS output frequency high and results of flight test.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.18-27
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• 1996

By integrating WDM to OPS unit which plays an improtant role for the reliability of CPN, we made it possible to provide CATV, VOD, and high-speed data services simultaneously and to meet easily the requirements for new services in the future. For the design of optimal system, the link analysis of power budget has been perfomred. Also, the prototyped system has been tested with STM-1 level signals to confirm functions such as transmission, distribution, and protection. The results proved that when occurred out-of-order or recovery of ONU, the system did the pertinent switching with minimum loss for high-speed data services. Also for video distribution services, the system has distributed STM-1 level signals sucessfully.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.