• Journal of Hydrogen and New Energy
• /
• v.29 no.6
• /
• pp.627-634
• /
• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.2
• /
• pp.87-91
• /
• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Journal of Sensor Science and Technology
• /
• v.33 no.5
• /
• pp.265-273
• /
• 2024

With the advent of artificial intelligence and Internet of Things, demands for high-performance sensors with high sensitivity and ultrafast response for big data acquisition and processing have increased. VO₂, a strongly correlated material, has been shown to exhibit a reversible and abrupt resistance change in the sub-nanosecond scale through a phase transition from an insulating to a metallic state at 68℃. The metal-insulator transition (MIT) of VO₂ provides the potential for the development of highly sensitive and ultrafast high-performance sensors. This is because it can be triggered by various external stimuli, such as heat, light, gas adsorption/desorption, and strain. Therefore, attempts have been made to develop high-performance sensors by controlling the MIT of VO₂ in response to external stimuli. This study reviewed recent progress in various VO₂-based sensors that utilize MIT, including photodetectors, gas sensors, and strain sensors. This review is expected to serve as an overview of the approaches for controlling the MIT behavior of VO₂ and provide insights into the design of high-performance sensors that exploit MIT.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.1
• /
• pp.355-363
• /
• 2015

HVDC technology has become popular as an economic mode of bulk power transmission over very long distances. Polymeric insulators in HVDC power transmission lines are affected by surface tracking and erosion problems due to contamination deposit, which pose a greater challenge in maintaining the reliability of the HVDC system. In addition, polymeric insulators are also naturally affected by aging due to various environmental stresses, which in turn accelerates the surface tracking and erosion problems. Research works towards the improvement of tracking and erosion resistance of polymeric insulators by adding nano-sized fillers in the base material are being carried out worldwide. However, surface tracking and erosion performance of nano-filled aged polymeric insulators for HVDC applications are not well reported. Hence, in the present work, tracking and erosion resistance of the nano $Al(OH)_3$ filled silicone rubber insulation material has been evaluated under DC voltages at different filler concentrations and aged conditions, as per IEC 60587 test procedures. Leakage current and contact angle measurements were carried out to understand the surface hydrophobicity. Moving average technique was used to analyze the trend followed by leakage current. Water aged specimen shows less tracking resistance when compared with thermal aged specimen. It is observed that nano-filler concentration of 5% is even sufficient to get better tracking/erosion resistance under DC voltages.

• Computers and Concrete
• /
• v.15 no.6
• /
• pp.951-972
• /
• 2015

The focus of the present study is to investigate both local and global behaviour of a precast concrete sandwich panel. The selected prototype consists of two reinforced concrete layers coupled by a system of cold-drawn steel profiles and one intermediate layer of insulating material. High-definition nonlinear finite element (FE) models, based on 3D brick and 2D interface elements, are used to assess the capacity of this technology under shear, tension and compression. Geometrical nonlinearities are accounted via large displacement-large strain formulation, whilst material nonlinearities are included, in the series of simulations, by means of Von Mises yielding criterion for steel elements and a classical total strain crack model for concrete; a bond-slip constitutive law is additionally adopted to reproduce steel profile-concrete layer interaction. First, constitutive models are calibrated on the basis of preliminary pull and pull-out tests for steel and concrete, respectively. Geometrically and materially nonlinear FE simulations are performed, in compliance with experimental tests, to validate the proposed modeling approach and characterize shear, compressive and tensile response of this system, in terms of global capacity curves and local stress/strain distributions. Based on these experimental and numerical data, the structural performance is then quantified under various loading conditions, aimed to reproduce the behaviour of this solution during production, transport, construction and service conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.11
• /
• pp.715-720
• /
• 2015

The photoinduced hydrophilicity of $TiO_2/WO_3$ double layer films was fabricated by using a conventional rf-magnetron sputtering method. The photoinduced hydrophilic reaction of the $TiO_2$ surface was enhanced by the presence of $WO_3$ under the $TiO_2$ layer by irradiation of a 10 W cylindrical fluorescent light bulb. However, when the $TiO_2$ and $WO_3$ layers were separated by an insulating layer, the surface did not appeared high hydrophilic, under the same light bulb. The enhanced photoinduced hydrophilic reaction can be explained by the charge transfer between $TiO_2$ and $WO_3$ layers. It was also demonstrated that visible light passing through the $TiO_2$ layer could excite $WO_3$. Thus, visible light can be used for the hydrophilic reaction in the present $TiO_2/WO_3$ system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.140-140
• /
• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.144-145
• /
• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.6
• /
• pp.445-454
• /
• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05e
• /
• pp.61-64
• /
• 2003

In the response to an increasing demand for electrical energy, much effort aimed to develop and commercialise HTS power equipments is going on around the world. For the development, it is necessary to establish the dielectric technology in $LN_2$. Hence many types of dielectric tests should be carried out to understand the dielectric phenomena at cryogenic temperature and to gather various dielectric data. Among the many types dielectric tests, the barrier effect were conducted with the simulated electrode after analysing the insulating configuration of the pancake coil type HTS transformer. The influence of a barrier on the dielectric strength was measured according to the size and the position of the barrier. It was shown that the effectiveness, the ratio of the breakdown voltage in presence of barrier to the voltage without barrier, is highest when the barrier is placed at the needle electrode side. And the barrier effect was not depend on the electrode array. The life time to breakdown with decreasing the applied voltage was increased remarkably having wide error band but the shape parameter in Weibull distribution was almost constant.