• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.8
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• pp.640-647
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• 2014

Infrared signature of aircraft exhaust plume is the critical factor for aircraft survivability. To improve the military aircraft survivability, the accurate prediction of infrared signature for the propulsion system is needed. The numerical analysis of thermal fluid field for nozzle inflow, free stream flow, and plume region is conducted by using the in-house code. Weighted Sum of Gray Gases Model based on Narrow Band with regrouping is adopted to calculate the spectral infrared signature emitted from aircraft exhaust plume. The accuracy and reliability of the developed code are validated in the one-dimensional band model. It is found that the infrared radiant intensity is relatively more strong in the plume through the analysis, the results show the different characteristic of the spectral infrared signature along the temperature, the partial pressure, and the species distribution. The continuous spectral radiant intensity is shown near the nozzle exit due to the emission from the nozzle wall.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1695-1702
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• 2001

This paper describes a design of CMOS infrared (IR) wireless data link IC which can be used in IrDA(Infrared Data Association) application from 4 Mb/s to 100 Mb/s The implemented chip consists of variable gain transimpedance amplifier which has a gain range from 60 dB to 100 dB, AGC (automatic gain control) circuits, AOC(automatic offset control) loop, 4 PPM (pulse position modulation) modulator/demodulator and DLL(delay locked loops). This infrared optical link If was implemented using commercial 0.25 um 1-poly 5-metal CMOS process. The chip consumes 25 mW at 100 Mb/s with 2.5 V supply voltage excluding buffer amplifier. The die area of prototype IC is 1.5 mm $\times$ 1 mm.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.303-311
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• 2020

Nondispersive infrared CO₂ gas sensor was developed after the simulation of optical cavity structure and assembling the optical components: IR source, concave reflectors, Fresnel lens, a hollow disk, and IR detectors. By placing a hollow disk in front of reference IR detector, the output voltages are almost constant value, near to 70.2 mV. The absorbance of IR light, F_a, shows the second order of polynomial according to ambient temperatures at 1,500 ppm. The differential output voltages and the absorbance of IR light give a higher accuracy in estimations of CO₂ concentrations with less than ± 1.5 % errors. After implementing the parameters that are dependent upon the ambient temperatures in microcontroller unit (MCU), the measured CO₂ concentrations show high accuracies (less than ± 1.0 %) from 281 K to 308 K and the time constant of developed sensor is about 58 sec at 301 K. Even though the estimation errors are relatively high at low concentration, the developed sensor is competitive to the commercial product with a high accuracy and the stability.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.10
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• pp.779-787
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• 2013

The effects of various nozzle configurations on infrared signature are investigated for the purpose of analysing the infrared signature level of aircraft propulsion system. A virtual subsonic aircraft is selected and then a circular convergent nozzle, which meets the mission requirements, is designed. Convergent nozzles of different configurations are designed with different geometric profiles. Using a compressible Navier-Stokes-Fourier CFD code, an analysis of thermal flow field and nozzle surface temperature distribution is conducted. From the information of plume flow field and nozzle surface temperature distribution, IR signature of plume and nozzle surface is calculated through the narrow-band model and the RadThermIR code. Finally, qualitative information for IR signature reduction is obtained through the analysis of the effects of various nozzle configurations on IR signature.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.697-702
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• 2003

FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.1
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• pp.57-62
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• 2024

This study conducted a measurement method of high temeprature conditions using infrared termography. All objects emit infrared light, and this emissivity has a significant impact on the temperature measurements of infrared thermal imaging (IR) cameras. In order to measure the temperature more accurately with the IR camera, correction equations were derived by measuring the emissivity according to the temperature change of combustible metals in a high-temperature environment. Two combustible metals, Mg and Al, were used to measure emissivity with changing temperature. Each metal was heated, the emissivity was measured by comparing the temperature with IR camera and thermocouples so that the correlation between temperature and emissivity could be anslyzed. As a result of the experiment, the emissivity of the metals increases as the temperature increased. This can be interpreted as a result of increased radiation emission as the thermal movement of internal metal molecules increased.

• Ceramist
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• v.10 no.3
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• pp.55-66
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• 2007

Infrared Scanning Near-field Optical Microscopy (IR-SNOM) is an extremely powerful analytical instrument since it combines IR spectroscopy's high chemical specificity with SNOM's high spatial resolution. In order to do this in the infrared, specialty chalcogenide glass fibers were fabricated and their ends tapered to generate SNOM probes. The fiber tips were installed in a modified near field microscope and both inorganic and biological samples illuminated with the tunable output from a free-electron laser located at Vanderbilt University. Both topographical and IR spectral images were simultaneously recorded with a resolution of ${\sim}50\;nm$ and ${\sim}100\;nm$, respectively. Unique spectroscopic features were identified in all samples, with spectral images exhibiting resolutions of up to ${\lambda}/60$, or at least 30 times better than the diffraction limited lens-based microscopes. We believe that IR-SNOM can provide a very powerful insight into some of the most important bio-medical research topics.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.91-95
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• 2017

Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.215-219
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• 2008

The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at $340^{\circ}C$ using a conventional PECVD system. The compositions of Si and N in SiNx films were confirmed by using Rutherford backscattering spectroscopy (RBS) and photoluminescence (PL) analysis. The surface morphology of SiNx films was also analyzed by using atomic force microscopy (AFM). It was found that the contents of NH(at. %) is the reverse related with those of SiH corresponding to the result of FT-IR. we conclude that a quantitative analysis on SiNx films can be possible through a precise detection of the contents of H in SiNx films with a FT-IR analysis only.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.5-9
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• 2019

Optical emission spectroscopy is used to identify chemical species and monitor the changes of process results during the plasma process. However, plasma process monitoring or fault detection by using emission signal variation monitoring is vulnerable to background signal fluctuations. IR heaters are used in semiconductor manufacturing chambers where high temperature uniformity and fast response are required. During the process, the IR lamp output fluctuates to maintain a stable process temperature. This IR signal fluctuation reacts as a background signal fluctuation to the spectrometer. In this research, we evaluate the effect of infrared background signal fluctuation on plasma process monitoring and improve the plasma process monitoring accuracy by using simple infrared background signal subtraction method. The effect of infrared background signal fluctuation on plasma process monitoring was evaluated on $SiO_2$ PECVD process. Comparing the $SiO_2$ film thickness and the measured emission line intensity from the by-product molecules, the effect of infrared background signal on plasma process monitoring and the necessity of background signal subtraction method were confirmed.