• 한국결정성장학회지
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• 제26권5호
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• pp.181-187
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• 2016

본 연구에서는 납이나 크롬이 함유되지 않은 친환경적인 물질의 새로운 주황 무기 안료를 개발하고자 하였다. 고상반응법을 이용하여 LPG와 Air를 이용한 환원분위기에서 $TiO_2-SnO-ZnO$계 주황색 무기 안료를 합성하였다. 합성 된 안료들의 특성을 분석하기 위하여 표색계 값인 $L^*a^*b^*$ 값을 측정 후, XRD를 이용하여 결정 상을 분석하였고, SEM을 이용하여 미세구조 관찰하였으며, XPS를 이용하여 원소들의 산화가 상태를 분석하였다. 고상 반응법으로 합성 후 열처리한 $TiO_2-SnO-ZnO$ 안료는 yellow에서 orange-red 사이의 색을 가진다. $TiO_2-SnO-ZnO$ 안료의 결정상 분석 결과, 5가지의 결정상이 혼재하는 것을 볼 수 있는데, $SnO_2$가 cubic과 tetragonal 구조 중 어떤 결정 구조를 가지는지가 발색의 가장 중요한 요인으로 작용하는 것을 확인하였다. XPS를 이용하여 원소들의 산화가 상태를 분석한 결과, $Sn^{4+}$의 비율이 높을수록 안료가 rYR에 가까운 색을 가지는 것을 확인할 수 있다.

• 신재생에너지
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• 제2권3호
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.6-10
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• 2016

In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature($600^{\circ}C$), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature($180{\sim}250^{\circ}C$). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.

• 대한전자공학회논문지SD
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• 제43권8호
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• pp.13-18
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• 2006

Sn과 Zn 금속을 이용해 각각 산소와 아르곤 가스를 주입한 대기압 분위기에서 열처리를 통해 $SnO_2$와 ZnO 나노박막을 형성시켰다. 나노구조로 형성된 $SnO_2$ 박막의 경우 CO 가스(5,000 ppm)에 대해 $200^{\circ}C$의 동작온도에서 약 50 %의 감도를 나타내었으며, $SnO_2$ 나노 금속산화물에 Pt 금속을 이온 코팅법에 의해 첨가한 박막의 경우에는 동작온도 $150^{\circ}C$에서 73 %의 높은 감도를 얻을 수 있었다. 순수 ZnO 나노 박막의 경우 NOx(20 ppm) 가스에 대해 낮은 감도를 나타내었으나, Cu를 이온 코팅법에 의해 첨가한 박막의 경우에는 동작온도 $200^{\circ}C$에서 90 %의 높은 감도를 나타내었다. 나노 구조가 아닌 $SnO_2$와 ZnO 박막이 가지는 CO와 NOx에 대한 가스 감도에 비해 매우 높은 감도를 가짐을 알 수 있었다.

• 한국표면공학회지
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• 제52권3호
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• pp.145-149
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• 2019

Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.25-25
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• 2006

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.