• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Journal of Ceramic Processing Research
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• v.22 no.2
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• pp.169-178
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• 2021

In this work, in-flight synthesis route of Ga doped ZnO (GZO) nano-powders was investigated experimentally and numerically, using Radio-Frequency (RF) induction plasmas. For experimental study, mixture of micron-sized ZnO and Ga₂O₃ powders were treated by RF induction plasmas, then, the as-treated powders were retrieved from reactor bottom and filtration for characterization. For numerical study, single particle model was combined with two-dimensional simulation code of RF induction plasma to predict the particle behaviors of ZnO and Ga₂O₃ depending on their sizes. First, experimental results showed that filtration-retrieved powders were characterized as GZO nano-powders although gallium content can be decreased due to Ga₂O₃ decomposition into sub-oxides at the elevated temperatures. From reactor bottom, however, spherical structures consisting of Ga₂O₃ and ZnO particles were observed in sub-millimeter sizes. Numerical results predicted that micron-sized (≤ 10 ㎛) ZnO and Ga₂O₃ particles can vaporize easily during the flight of plasma, while particles with the sizes of 25~100 um were simulated to be partially evaporated or unevaporated. Comparing these experimental and numerical results indicates that GZO nano-powders can be synthesized from vapor species of ZnO and Ga₂O₃, which are primarily produced by in-flight treatment of micron-sized ZnO and Ga₂O₃ powders in RF induction plasmas.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.12
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• pp.1057-1064
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• 2014

The satellite on geostationary orbit accommodates multiple payloads into a single spacecraft platform and launched in June 26, 2010. The electrical power required to the satellite during sunlight is generated by a solar array wing. The solar cells are the GaInP/GaAs/Ge Triple Junction cells named Gaget2 cells from RWE Space, which were based on a Spectrolab epitaxy. This paper evaluates solar array power performance at end of design life based on the trend analysis results for the flight data on geostationary orbit. The estimated solar array power performance at end of design life compares with the power performance provided by solar array manufacturer. The solar cells show nominal behavior without significant degradation through the trend analysis results.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.1
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• pp.31-37
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• 2015

Chelating agents 1,4,7-triazacyclononanetriacetic acid (NOTA), 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) and 30-amino-3,14,25-trihydroxy-3,9,14,20,25-penta-azatriacontane-2,10,13,21,24-pentaone (desferrioxamine, DFO) were labeled with $^{68}Ga$ and tested in vitro properties to check the feasibility of using DFO as a bifunctional chelating agent or renal imaging agent. The chelating agents of concentration $2{\mu}M$ were labeled with $^{68}Ga$ in 0.1 M HCl at pH 1.7-10.3 at room temperature and $80^{\circ}C$ and the optimal pH for labeling each chelating agent was found. And then, the chelating agents were labeled with $^{68}Ga$ in various concentration of chelating agents at optimal pH. The labeled chelating agents were subject to stability test in human serum and to binding studies to human red blood cell (RBC) and plasma protein. The optimal pH's of NOTA, DOTA and DFO for $^{68}Ga$-labeling were 4.4, 3.6 and 5.6, respectively. DFO ($10{\mu}M$) showed high labeling efficiency (>97%) at pH 5.6. All the labeled chelating agents showed high stability in human serum. $^{68}Ga$-DFO showed low RBC binding but significant amount was bound to plasma protein. The results demonstrated that $^{68}Ga$-DFO can be used as a bifunctional chelating agent but not as a renal imaging agent.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.177-182
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• 2007

This paper presents the InGaP/GaAs HBT differential LC VCO with low phase noise performance for adaptive feedback interference cancellation system(AF-lCS). The VCO is verified with enhanced tank structure including filtering technique. The output tuning range for proposed VCO using asymmetric inductor and symmetric capacitors withlow pass filtering technique is 207 MHz. The output powers are -6.68 including balun and cable loss. The phase noise of this VCO at 10 kHz, 100 kHz and 1 MHz are -102.02 dBc/Hz, -112.04 dBc/Hz and -130.40 dBc/Hz. The VCO is designed within total size of $0.9{\times}0.9mm^2$.

• Computational Structural Engineering
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• v.10 no.4
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• pp.349-358
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• 1997

The present paper describes an investigation into the application of the genetic algorithm (GA) in the optimum design of composite laminated structure. Stochastic processes generate an initial population of designs and then apply principles of natural selection/survival of the fittest to improve the designs. The five test functions are used to verify the robustness and reliability of the GA, and as a numerical example, minimum weight of a cantilever composite laminated beam with a mix of continuous, integer and discrete design variables is obtained by using the GA with exterior penalty function method. The design problem has constraints on strength, displacements, and natural frequencies, and is formulated to a multidimensional nonlinear form. From the results, it is found that the GA search technique is very effective to find the good optimum solution as well as has higher robustness.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.152-152
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.151-151
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• 1998

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.59-63
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• 2012

Ga2O3-core/CdO-shell nanowires were synthesized by a two step process comprising thermal evaporation of GaN powders and sputter-deposition of CdO. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that the cores and the shells of the annealed coaxial nanowires were single crystal of monoclinic Ga2O3 and FCC CdO, respectively. As-synthesized Ga2O3 nanowires showed a broad emission band at approximately 460 nm in the blue region. The blue emission intensity of the Ga2O3 nanowires was slightly decreased by CdO coating, but it was significantly increased by subsequent thermal annealing in a reducing atmosphere. The major emission peak was also shifted from ~500 nm by annealing in a reducing atmosphere, which is attributed to the increases in the Cd interstitial and O vacancy concentrations in the cores.