• Journal of Industrial Technology
• /
• v.31 no.B
• /
• pp.119-125
• /
• 2011

N-doped Titanium oxides were prepared by using urea as a source of nitrogen. The photoactivities of the doped $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, ultraviolet lamp, fluorescent lamp and solar light. XRD analysis was conducted to identify the crystal structure of the synthesized photocatalysts. N-doped $TiO_2$ and $pure-TiO_2$ was anatase type. SEM results showed that spherical particles were formed, which are the characteristics of the anatase form. N doped $TiO_2$ showed higher $UV_{254}$ decrease ratio and DOC removal ratio compared to $pure-TiO_2$. The humic acid degradation reaction using the UV-A lamp and UV-C lamp was assigned to pseudo-first order reaction. For solar light, only $pure-TiO_2$ and $N-TiO_2$ exhibited the pseudo-first order reaction.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.27-29
• /
• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.249-254
• /
• 2008

Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.43-46
• /
• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.218-221
• /
• 2006

The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

• Journal of the Korean Chemical Society
• /
• v.63 no.2
• /
• pp.94-101
• /
• 2019

Nb, Mo-doped and Nb/Mo-codoped $VO_2(M)$ nanocrystallites with various doping levels were synthesized for the first time by a hydrothermal and post thermal transformation method. The reversible phase transition characteristics of those doped $VO_2(M)$ was comparatively investigated. Nb-doping of $VO_2(M)$ by this method resulted in a very efficient lowering of the transition temperature ($T_c$) with a rate of $-16.7^{\circ}C/at.%$ that is comparable to W-doping, while Mo-doping did not give a serious reduction of $T_c$ with only a rate of $-5.1^{\circ}C/at.%$. Nb/Mo-codoping gave a similar result to Nb-doping without a noticeable difference. The thin films of Nb-doped and Nb/Mo-codoped $VO_2(M)$ with a thickness of ca. 120 nm were prepared by a wet-coating of the nanoparticle-dispersed solutions. Those films showed a good thermochromic modulation of near infrared radiation with 30-35% for Nb-doped $VO_2(M)$ and 37-40% for Nb/Mo-codoped ones. Nb/Mo-codoped $VO_2(M)$ film showed slightly enhanced thermochromic performance compared with Nb-doped $VO_2(M)$ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.12
• /
• pp.1022-1026
• /
• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.1-10
• /
• 2024

Direct use of sunlight through the glass windows is an efficient way to reduce the energy consumption related to the heating, cooling, and lighting. Introduction of near-infrared modulating properties through colloidal doped metal oxide nanocrystals into the classical electrochromic materials accelerates the development of next-generation electrochromic devices. There has been a steady enhancement in the performance of electrochromic devices, necessitating a review of the recent progress in next-generation electrochromic devices employing doped metal oxide nanocrystals. This review provides an overview of the current developments in next-generation electrochromic smart windows utilizing colloidal doped metal oxide nanocrystals, with a focus on the key factors for achieving these advanced windows. Colloidal doped metal oxide nanocrystals are a crucial component in realizing and bringing to market the next generation of electrochromic windows, though further research and development are still required in this regard.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.10a
• /
• pp.175-175
• /
• 2009

AZO, GZO, ZIO 박막은 DC 마그네트론 법으로 각각의 소결체 타겟을 사용하여 유리 기판위에 증착되었다. 상온에서 증착된 GZO 박막의 경우 $1.61{\times}10^{-3}{\Omega}cm$ 의 가장 낮은 비저항을 나타내었다. 전기적 특성을 향상시키기 위하여 기판온도를 상승하였을 때 역시 GZO 박막이 가장 낮은 $6.413{\times}10^{-4}{\Omega}cm$ 을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.411.1-411.1
• /
• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.