Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell

Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성

  • 최혁 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2007.12.01


We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.


  1. M. T. Kostyshin, E. V. Mikhailovskaya, and P. F. Romanenko, 'Photographic sensitivity effect in thin semiconducting films on metall substrates', Sov. Phys. (Solid State), Vol. 8, p. 451, 1966
  2. J. Hajto, P. J. S. Ewen, R. E. Belford, and A. E. Owen, 'Interference grating fabrication in spin-coated $As_2S_3$ films', Thin Solid Films, Vol. 200, p. 229, 1991
  3. M. N. Kozicki, S. W. Hsia, A. E. Owen, and P. J. S. Ewen, 'Pass - a chalcogenide-based lithography scheme for I.C. fabrication', J. Non-Cryst. Solids, Vol. 137&138, p. 1341, 1991
  4. T. Kawaguchi, S. Maruno, and S. R. Elliott, 'Photoinduced surface deposition of metallic silver in Ag--- As---S glasses: effect of addition of other elements', J. Non-Cryst, Solids, Vol. 212, p. 166, 1997
  5. M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, 'Non-volatile memory based on solid electrolytes', Proceedings of the 2004 Non-Volatile Memory Technology Symposium, p. 10, 2004
  6. R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, e. Pinnow, J. Robertson, and K. Ufert, 'Electrical characterization of solid state ionic memory elements', Proceedings of the 2003 Non-Volatile Memory Technology Symposium, p. 17-1-17-6, 2003
  7. M. N. Kozicki, M. Park, and M. Mitkova, 'Nanoscale memory elements based on solid state electrolytes', IEEE Trans. Nanotechnology, Vol. 4, No.3, p. 331, 2005
  8. G. Muller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, 'Status and outlook of emerging nonvolatile memory technologies', IEDM Technical Digest, p. 567, 2004
  9. A. Pradel, G. Taillades, C. Cramer, and M. Ribes, 'Ion dynamics in superionic chalcogenide glasses studied in large frequency and temperature ranges', Solid State Ion., Vol. 105, p. 139, 1998

Cited by

  1. A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method vol.22, pp.12, 2009,