• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.81-86
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• 2000

To evaluate the possibility of the partial melting soldering. wettability of partial melted solders was measured using wetting balance. Off eutectic Sn-Pb allows are wettable in their partial melting zone. Especially, Pb rich alloys showed excellent wettability while wettability of Sn rich alloys were adequate or poor. It is found that wettability increases over $200^{\circ}C$ regardless of composition liquid fraction and phases of the original alloy Sn-7Ag alloy showed good wettability in their partial melting zone, while Sn-65Bi alloy was non-wettable under their melting points.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.23-28
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• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.161-164
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• 2001

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.268-270
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• 2001

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.111-114
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• 2009

For the fabrication of core-shell structure bimetallic lead-free solder balls, both the critical temperature ($T_{cr}$) for the phase separation of two immiscible liquid phases and the temperature coefficient of the interfacial tension between the two separated liquid phases are required. In order to obtain this information, the temperature dependence of the surface tension of 60%Bi-24%Cu-16%Sn(-REM) alloys was measured using the constrained drop method. The slope of the temperature dependence of the surface tension changed clearly at a critical temperature for the separation of two immiscible liquid phases. The critical temperature of the 60%Bi-24%Cu-16%Sn alloy was estimated to be 1097K. An addition of 0.05% Ce decreased the critical temperature to 1085K, whereas that of 0.05% La increased it to 1117K. It was found that the surface tension and its temperature coefficient of the 60%Bi-24%Cu-16%Sn alloy were slightly increased by the addition of 0.05% Ce and 0.05% La. In addition, additions of Ce and La increased the temperature coefficient of the interfacial tension.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.119-125
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• 2017

We have studied the effects of Ag on the characteristics of $Sn_{43}Bi_{57}Ag_x$(wt%) lead-free solders for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of Ag3Sn after reacting with some part of Sn atoms, while they did not react with Bi atoms, but decreased the mean size of Bi solid phase and the thickness of solder. When Ag atoms of 3.0 wt% was added to eutectic $Sn_{43}Bi_{57}$(wt%) solder, it showed the optimally useful results that the peel strength of photovoltaic ribbon greatly increased and the sheet resistance of the solder decreased. In the meanwhile, the eutectic $Sn_{43}Bi_{57}$(wt%) solder showed a low melting temperature of $138.9^{\circ}C$, and showed a very similar result regardless of the added amount of Ag atoms.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.43-47
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• 2001

Sn-3Ag-8Bi-5In was developed for the intermediate melting point solder. Although In-contained solder is expensive, its melting point is lower than these of Sn-Ag-Cu alloys. Sn-3Ag-8Bi-5In solder used for this research has a melting range of 188~$204^{\circ}C$. On this study wetting characteristics of Sn-3Ag-8Bi-5In were evaluated in order to investigate its availability as a Pb-free solder. Wettabilities of Sn-37Pb and Sn-3.5Ag solders were also studied to compare these of the Sn-3Ag-8Bi-5In. Experimental results showed that the zero-cross-time and wetting time at $240^{\circ}C$ for the Sn-3Ag-8Bi-5In were 1.1 and 2.2 second respectively. These values are a little better than these of Sn-37Pb and Sn-3.5Ag solders. The equilibrium wetting farce of the Sn-3Ag-8Bi-5In was 5.8 mN at $240^{\circ}C$, and it was tuned out to be a little higher than that of Sn-3.5Ag and lower than that of Sn-37Pb.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.94-98
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• 2003

The microstructure of Sn1.8Bi0.8Cu0.6In alloys was evaluated at various aging time. The bumps of Sn1.8Bi0.8Cu0.6In alloys after reflowed at $250^{\circ}C$ were well-formed and had 260um height. The craters on the bumps, however, were observed. Intermetallic compounds formed on the interface between so]der and Cu/Ni UBM were consist of $(Cu,Ni)_6Sn_5$. As aging goes on up to 1000hours, the composition of Ni changed from $6.63\%$ at initial stage(as-reflowed) to $13.47\%$ at final stage(1000hours aging ). In addition, after 500hours aging, the floating of IMC to the solder was observed.