• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.936-940
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• 2005

IMML(Inorganic metal multi-layer) was used as cathode in the OLED devices to reduce the reflectance or ITO and increase the contrast ratio. Device structure was $ITO/{\alpha}-NPD/Alq_3:DCJTB/Alq_3/IMML/Al$. $Alq_3$ and DCJTB (4 - (dicyanomethylene) - 2 - ( 1 - propyls) 6 - methy 4H - pyrans) as host material lot red emission and red emitting guest material. IMML made three different layer: thin aluminum layer, aluminum layer doped with silicon monoxide, thick aluminum layer. The red OLED device with IMML showed the average reflectance of $4.97\%$, and then normal OLED with or without polarizer showed the average reflectance of $4.55\%$, $46\%$ at visible range from 380 nm to 780 nm. The brightness of OLED with IMML at 13 V was 5557 $cd/m^2$, and that of normal OLED with polarizer was 4872 $cd/m^2$. IMML could be the substitution for polarizer with same reflection, low cost, easy process in flat panel display market.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.270-270
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• 2010

OLED device is one of the most attractive and alternative display components, which stems primarily from the self-emission, large intrinsic viewing angle, and fast switching speed. However, because of its relatively short history of development, much remains to be studied in terms of its basic device physics, manufacturing processes, and reliability etc. Especially among several issues, it should be noted that the device characteristics are very sensitive to the surface properties of transparent conducting oxide (TCO) electrode materials. In this study, we have investigated the performance of OLED devices as a function of sheet resistance and surface roughness of TCO thin films. For this purpose, ITO and IZO thin films were deposited by r. f. magnetron sputtering under various ambient gases (Ar, Ar+O2 and Ar+H2, respectively). The crystal structure and surface morphology were examined by using XRD and FESEM. Also, electrical and optical properties were Investigated.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1505-1507
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• 1996

In this study, $(Pb_{0.88}La_{0.12})(Zr_{0.40}Ti_{0.60})O_{2.97}$ (La/Zr/Ti=12/40/60) ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. PLZT stock solutions were made and spin-coated on the ITO-glass rubstrate at 4000[rpm] for 30[sec]. Coated specimens were baked to remove the organic materials at $400[^{\circ}C]$ for 10[min]. This procedure was repeated 5 times. The coated films were finally annealed at $450{\sim}700[^{\circ}C]$ for 1[hr]. The ferroelectric perovskite phases precipitated under the sintering of $550{\sim}700[^{\circ}C]$ for 1[hr]. Relative dielectric constant of the PLZT thin were increased with increasing the sintering temperature, the thin file sintered at $650[^{\circ}C]$ showed the highest value of 196. But in the PLZT thin film sintered at $700[^{\circ}C]$, relative dielectric constant was greatly decreased due to reacts between ITO electrode and glass substrate. In all thin films, the transmittance was more than 70[%] (at 632.8[nm]).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.724-731
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• 2006

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with 4-octyl-4'-(5-carboxylpentamethyleneoxy)azobenzene (denoted as 8A5H) and phospholipid(L-a-dimyristoylphosphatidylcholine, denoted as DMPC and L-a-dilauroylphosphayidylcholine, denoted as DLPC). The LB films of 8A5H, 8A5H-DMPC and 8A5H-DLPC mixture monolayers were deposited by using the LB method on the indium tin oxide(ITO) glass. The electrochemical properties measured by using cyclic voltammetry with a three-electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0 mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350 mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rates were 50, 100, 150 and 200 mV/s, respectively. As a result, LB films of 8A5H and 8A5H-DLPC mixture monolayers appeared irreversible process caused by only the oxidation current from the cyclic voltammogram and LB films of 8A5H-DMPC monolayer mixture was found to be caused by a reversible oxidation-reduction process.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1491-1493
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• 1997

In this study, Sol-Gel derived $Ba_{0.7}Sr_{0.3}TiO_3$ (BST(70/30)) thin films were investigated. The stock solution of BST were fabricated and spin-coated on the Pt/Ti/$SiO_2$/Si and ITO/glass substrates. The coated specimen were dried at $300^{\circ}C$ and finally annealed at $650{\sim}750^{\circ}C$. To analyse crystallization condition and microstructural morphology for different substrates, XRD, and SEM analysis were processed. In the BST(70/30) composition. dielectric constant and loss characteristics measured at 1kHz were 173, 0.01% for Pt/Ti/$SiO_2$/Si substrates and 181, 0.019% for ITO/glass substrates, respectively.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Journal of the Korea Society of Computer and Information
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• v.10 no.1 s.33
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• pp.1-6
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• 2005

White light emission is very important for applying electroluminescent device to full display, backlight and illumination light source. In this letter, Multilayer molecular organic white-light-emitting device using thin nim of blue material nitro-DPVT with fluorescent dye Rubrene for an orange emission were fabricated. The basic structure of the fabricated device is a-NPD / nitro-DPVT / nitro- DPVT:Rubrene / BCP/ Alq3. Aluminum is used as the cathode material and ITO was anode material. The white light emission spectrum covers a wide range of the visible region and the Commission Internationale do I'E clairage (C.I.E.) coordinates of the emitted light was ((0.3347, 0.3515) at 14V. The turn voltage is as low as 2.5V and quantum efficiencies are $0.35\%$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).