Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.439-440
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- 2008
Properties of IZTO Thin Film prepared by the Hetero-Target sputtering system
ITO-IZO 이종 타겟 이용한 Indium Zinc Tin Oxide(IZTO)박막의 특성
- Kim, Dae-Hyun (Kyungwon University) ;
- Rim, You-Seong (Kyungwon University) ;
- Jang, Kyung-Uk (Kyungwon University) ;
- Kim, Kyung-Hwan (Kyungwon University)
- Published : 2008.06.19
Abstract
Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO (