• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.9C
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• pp.871-878
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• 2002

The cartesian loop chip which is one of key devices in narrow-band Walky-Talky transmitter using RZ-SSB modulation method was designed and implemented with 0.35 ㎛ CMOS technology. The reduced size and low cost of transmitter were available by the use of direct-conversion and cartesian loop chip, which improved the power efficiency and linearity of transmitter. In addition, low power operation was possible through CMOS technology. The performance test results of transmitter showed -23㏈c improvement of IMD and -30㏈c below suppression of SSB characteristic in the operation of cartesian loop chip (closed-loop). At that time, the transmitting power was about 37㏈m (5W). The main parameters to improve the transmitting characteristic and to compensate the distortion in feed back loop such as DC-offset, loop gain and phase value are interfaced with notebook PC to be controlled with S/W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.924-931
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• 2002

In this paper, a new λ/4 bias transmission line that is added dumbbell-shaped defected ground structure(DGS) on ground plane of the conventional λ/4 bias transmission line is proposed. This DGS λ/4 bias transmission line maintains high characteristic impedance, but physical width is wider and length is shorter than that of the conventional bias line. If the proposed bias line is attached on signal transmission line, this bias line can reduces the $3^{rd}$ harmonic signal as well as the$2^{nd}$ harmonic signal. With harmonic reduction characteristics, efficiency and linearity of amplifier are improved. The proposed bias line is adopted in power amplifier on IMT-2000 base-station transmitting band. This paper presents several simulations and experimental results of DGS to show validity of the proposed power amplifier using the new λ/4 bias transmission line. Experimental results represent that the $3^{rd}$ harmonic signal is reduced about 26.5 dB and efficiency is improved about 9.1 % and IMD3 is improved 4.5 dB than the conventional structure.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.268-275
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• 1999

In this paper, a new type of linearization technique proposed, in which the predistortor was added to the feedforward linearizer. As the input power level is applied to HPA, the gain and phase characteristics of the amplifier are also varied. By using of the predistorter the amplitude imbalance and phase imbalance is kept constant. Experimental results are present for Korea PCS frequency band. The center frequency of the feedforward amplifier is 1.843.75 MHz with 1.23 MHz bandwidth. The 2-tone intermodulation distortion at 37dBm output power is about -50dBc, and spurious emission are -46dBc at $fc{\pm}\;885KHz\;and\;-52dBc\;at\;fc\;{\pm}1.98MHz$, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.68-72
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• 2012

In this paper, highly linear power amplifier using bandpass filter based on metamaterial and Composite Right- / Left-Handed (CRLH) structure is proposed. The proposed bandpass filter consist of the series capacitor, series microstrip line and the parallel inductor, parallel microstrip line. The insertion loss is minimized at operation frequency and the $2^{nd}$ harmonic is suppressed by the bandpass filter using the CRLH structure. And we improved the Adjacent Channel Leakage Ratio (ACLR) using the characteristic of the proposed bandpass filter. At 2.14 GHz, we have obtained the output power of 38.83 dBm, the $2^{nd}$ harmonic of .61.33 dBc, the $3^{rd}$ IMD of .54.67 dBc, and ACLR of .51.33 dBc at 5 MHz offset, -56.50 dBc at 10 MHz offset, respectively.

• Journal of Advanced Navigation Technology
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• v.24 no.1
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• pp.53-60
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• 2020

In this paper, We have studied the structure of a Telemetry Transmitter capable of transmitting variable data rates. This paper proposed a structure combining variable pre-modulation filter with cutoff characteristic with variable input sample rate converter. Variable pre-modulation filter has the same characteristics as pre-modulation filter and is converted to a constant sampling rate without structural changes according to the variable input data rate. We propose a software program that actively controls variable pre-modulation filter and variable input sample rate converter to respond to real-time changing data.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.221-225
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• 1999

In this paper, a new type of predistortion linearizer has been studied. It employs a series feedback amplifier with a large source inductance as a predistortion linearizer, which provides positive amplitude and negative phase deviations for input Power and can compensate for AM-AM and AM-PM distortions of power amplifier. This predistortion lineariaer consists of only one CaAs FET, large source inductor, input output matching networks and bias circuits. Because of its simple circuit, the linear can be operated over a broad bandwidth and has good thermal stability The characteristics of this linearizer can be easily tuned using source inductor, its gate bias condition. In fabricated linearizer, the third-order intermodulation distortion(IMD) for main amplifier alone is 10.61dBc, and the $IM_3$ for main amplifier with predistorter is 21.91dBc. Therefore, the $IM_3$ characteristic results an improvement of approximately 11dB.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.75-82
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• 2009

This paper proposes a method which increases the linearity using an improvement mechanism of Doherty power amplifier and compensates the decrement of efficiency due to improvement of linearity. To verify the method, a 20W power amplifier is designed and implemented. Compared with 2-way Doherty power amplifier, the implemented 3-way Doherty power amplifier with class F shows improved linearity about 10dBc and efficiency about 1.5%. Also, efficiency characteristic has been improved about 3.5% compared with the 2-way Doherty power amplifier while maintaining linearity. This results show that the proposed 3-way Doherty power amplifier with class F is shown to be adequate for improvement of efficiency and linearity. It is expected that the proposed amplifier can be used for various wireless communication system amplifiers.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.37-42
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• 2000

We have numerically solved rate-equations of semiconductor optical amplifier (SOA) to understand the characteristics of SOA. The rate-equations we have used can describe injection carrier density, amplified spontaneous emission and signal photon density in spatial and time domain by dividing the cavity into multi-section. We have investigated injection carrier density, amplified spontaneous emission and signal photon density as a function of position and time in the case of single channel input in the form of square pulse. Also we have analyzed the non-linear phenomena of SOA in the case of injecting multi-channel wavelengths as in WDM. Intermodulation distortion (IMD) caused by beat among channels has significant effects on the signal distortion as the channel spacing becomes narrower, and channel crosstalk becomes larger as the power of signals increases. In the case of the injection of another CW laser whose wavelength is far enough from the signal wavelengths, the crosstalk and the output signal distortion can be significantly reduced. duced.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.